Product Information

VB40100C-M3/8W

VB40100C-M3/8W electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers 40A,100V,TRENCH SKY RECT.

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.825 ea
Line Total: USD 6.82

0 - Global Stock
MOQ: 1  Multiples: 800
Pack Size: 800
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 8000
Multiples : 800
8000 : USD 2.0301
12000 : USD 2.0099
20000 : USD 1.9898
24000 : USD 1.9698
28000 : USD 1.9502
40000 : USD 1.9306
60000 : USD 1.9113
100000 : USD 1.8923
200000 : USD 1.8734

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 6.825
10 : USD 2.4632
100 : USD 1.9808
500 : USD 1.6216
1000 : USD 1.3342
2500 : USD 1.2111

     
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VB40100C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.38 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology 2 D PAK (TO-263AB) Low forward voltage drop, low power losses K High efficiency operation Low thermal resistance 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C 1 VB40100C Material categorization: for definitions of compliance PIN 1 K please see www.vishay.com/doc 99912 PIN 2 HEATSINK TYPICAL APPLICATIONS click logo to get started DESIGN SUPPORT TOOLS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC Models converters, and reverse battery protection. Available MECHANICAL DATA PRIMARY CHARACTERISTICS 2 Case: D PAK (TO-263AB) I 2 x 20 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 100 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 250 A FSM commercial grade V at I = 20 A 0.61 V F F Terminals: matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 2 Package D PAK (TO-263AB) M3 suffix meets JESD 201 class 2 whisker test Circuit configuration Common cathode Polarity: as marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VB40100C UNIT Maximum repetitive peak reverse voltage V 100 V RRM per device 40 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 20 Peak forward surge current 8.3 ms single half sine-wave superimposed I 250 A FSM on rated load per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.47 - F I = 10 A T = 25 C 0.54 - F A I = 20 A 0.67 0.73 Instantaneous forward voltage F V V F per diode I = 5 A 0.38 - F I = 10 A T = 125 C 0.45 - F A I = 20 A 0.61 0.67 F T = 25 C 9- A A V = 70 V R T = 125 C 10 - mA A Reverse current at rated V R I (2) R per diode T = 25 C - 1000 A A V = 100 V R T = 125 C 21 45 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 20-Jun-2018 Document Number: 87987 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VB40100C www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VB40100C UNIT Typical thermal resistance per diode R 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VB40100C-M3/4W 1.39 4W 50/tube Tube TO-263AB VB40100C-M3/8W 1.39 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 50 100 T = 150 C A 40 10 T = 125 C A 30 T = 100 C A 20 1 10 T = 25 C A 0 0.1 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1 Case Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 18 100 T = 150 C A 16 D = 0.8 T = 125 C A D = 0.5 10 14 D = 0.3 12 T = 100 C 1 A D = 0.2 10 D = 1.0 8 D = 0.1 0.1 T 6 T = 25 C A 4 0.01 2 D = t /T t p p 0 0.001 0 5 10 15 20 25 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 20-Jun-2018 Document Number: 87987 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Power Loss (W) Average Forward Current (A) Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
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