V12W60C-M3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.38 V at I = 3 A F F FEATURES Trench MOS Schottky technology TMBS Ideal for automated placement TO-252 (D-PAK) Low forward voltage drop, low power losses K High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C A Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 A V12W60C TYPICAL APPLICATIONS A K For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and A HEATSINK reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-252 (D-PAK) I 2 x 6 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 60 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 90 A FSM commercial grade V at I = 6 A (T = 125 C) 0.47 V F F A Terminals: Matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package TO-252 (D-PAK) M3 suffix meets JESD 201 class 1A whisker test Diode variation Dual common cathode Polarity: As marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V12W60C UNIT Maximum repetitive peak reverse voltage V 60 V RRM per device 12 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 6 Peak forward surge current 8.3 ms single half sine-wave I 90 A FSM superimposed on rated load per diode Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 04-Dec-13 Document Number: 89972 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V12W60C-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 3 A 0.47 - F T = 25 C A I = 6 A 0.52 0.62 F (1) Instantaneous forward voltage per diode V V F I = 3 A 0.38 - F T = 125 C A I = 6 A 0.47 0.58 F T = 25 C -3500 A A (2) Reverse current per diode V = 60 V I R R T = 125 C 9 27 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V12W60CUNIT per diode 2.8 R JC Typical thermal resistance per device 1.4 C/W (1) (2) per device R 65 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V12W60C-M3/I 0.38 I 2500/reel 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 14 4.0 D = 0.8 o D = 0.5 Rth =Rth =1.4 C/W JA JC 3.5 12 D = 0.3 3.0 D = 0.2 10 D = 1.0 2.5 D = 0.1 8 2.0 6 1.5 o T ,Rth =65 C/W A JA T 4 1.0 2 0.5 D = t /T t p p 0.0 0 0 1 23 45 67 0 255075 100 125 150 Average Forward Current (A) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 04-Dec-13 Document Number: 89972 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)