V10150S-M3/4W

V10150S, VI10150S www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.59 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB TO-262AA Low forward voltage drop, low power losses K High efficiency operation Solder bath temperature 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance 3 3 please see www.vishay.com/doc?99912 2 2 1 1 TYPICAL APPLICATIONS V10150S VI10150S For use in high frequency DC/DC converters, switching PIN 1 PIN 1 PIN 2 PIN 2 power supplies, freewheeling diodes, OR-ing diode, and CASE K PIN 3 PIN 3 reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-220AB and TO-262AA I 10 A F(AV) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and V 150 V RRM commercial grade I 120 A FSM Terminals: matte tin plated leads, solderable per V at I = 10 A 0.69 V F F J-STD-002 and JESD 22-B102 T max. 150 C J M3 suffix meets JESD 201 class 1A whisker test Package TO-220AB, TO-262AA Polarity: as marked Diode variation Single Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLV10150SVI10150SUNIT Maximum repetitive peak reverse voltage V 150 V RRM Maximum average forward rectified current (fig. 1) I 10 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 120 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.79 - F T = 25 C A I = 10 A 1.05 1.20 F (1) Instantaneous forward voltage V V F I = 5 A 0.59 - F T = 125 C A I = 10 A 0.69 0.75 F T = 25 C 1.3 - A A V = 100 V R T = 125 C 1.2 - mA A (2) Reverse current I R T = 25 C - 150 A A V = 150 V R T = 125 C 3 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 06-Nov-17 Document Number: 89246 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000V10150S, VI10150S www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10150SVI10150SUNIT Typical thermal resistance R 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V10150S-M3/4W 1.88 4W 50/tube Tube TO-262AA VI10150S-M3/4W 1.45 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 100 Resistive or Inductive Load T = 150 C A 10 8 10 T = 125 C A 6 T = 100 C A 1 4 T = 25 C A 2 Mounted on Specific Heatsink 0 0.1 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 10 100 D = 0.8 D = 0.5 D = 0.3 T = 150 C A 8 10 D = 0.2 T = 125 C A 1 6 D = 1.0 T = 100 C D = 0.1 A 0.1 4 T 0.01 2 T = 25 C A D = t /T t p p 0.001 0 02 4 6 8 10 12 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Dissipation Characteristics Fig. 4 - Typical Reverse Characteristics Revision: 06-Nov-17 Document Number: 89246 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Average Power Loss (W) Average Forward Rectified Current (A) Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)