Product Information

TCDT1101

TCDT1101 electronic component of Vishay

Datasheet
Transistor Output Optocouplers Phototransistor Out

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6509 ea
Line Total: USD 0.65

116 - Global Stock
Ships to you between
Tue. 21 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3783 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

TCDT1101
Vishay

1 : USD 0.2065

116 - WHS 2


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

TCDT1101
Vishay

1 : USD 0.6509
10 : USD 0.4278
100 : USD 0.2944
1000 : USD 0.2346
2000 : USD 0.2024
10000 : USD 0.1978
24000 : USD 0.1966
50000 : USD 0.1944
100000 : USD 0.1932

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rise Time
Current Transfer Ratio
Fall Time
Output Type
Package / Case
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Input Type
Output Device
Brand
Number Of Channels Per Chip
Factory Pack Quantity :
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TCDT1100, TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES NC E C Isolation test voltage 5000 V RMS 4 65 High common mode rejection No base terminal connection for improved noise immunity CTR offered in 4 groups 1 2 3 17201 3 A( +) C () NC Thickness though insulation 0.4 mm V Creepage current resistance according to VDE0303/ DE IEC 60112 comparative tracking index: CTI 275 Compliant to RoHS directive 2002/95/EC and in 17201 4 accordance to WEEE 2002/96/EC APPLICATIONS DESCRIPTION Switch-mode power supplies The TCDT1100, TCDT1100G series consists of a Line receiver phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic dual inline package. Computer peripheral interface The base of the phototransistor is not connected providing Microprocessor system interface noise immunity. Circuits for safe protective separation against electrical VDE STANDARDS shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage 300 V These couplers perform safety functions according to the - for appl. class I - III at mains voltage 600 V following equipment standards: according to DIN EN 60747-5-5 DIN EN 60747-5-5 (VDE0884) Optocoupler for electrical safety requirements AGENCY APPROVALS IEC 60950/EN 60950 UL1577, file no. E52744, double protection Office machines (applied for reinforced isolation for mains BSI IEC 60950 IEC 60065 pending voltage 400 V ) RMS DIN EN 60747-5-5 (VDE0884) VDE0804 FIMKO Telecommunication apparatus and data processing IEC 60065 Safety for mains-operated electronic and related household apparatus ORDER INFORMATION PART REMARKS TCDT1100 CTR > 40 %, DIP-6 TCDT1101 CTR 40 % to 80 %, DIP-6 TCDT1102 CTR 63 % to 125 %, DIP-6 TCDT1103 CTR 100 % to 200 %, DIP-6 TCDT1100G CTR > 40 %, DIP-6, 400 mil TCDT1101G CTR 40 % to 80 %, DIP-6, 400 mil TCDT1102G CTR 63 % to 125 %, DIP-6, 400 mil TCDT1103G CTR 100 % to 200 %, DIP-6, 400 mil Note G = leadform 10.16 mm G is not marked on the body. www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 83535 776 Rev. 1.7, 09-Mar-10 TCDT1100, TCDT1100G Optocoupler, Phototransistor Output Vishay Semiconductors (1) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 5V R Forward current I 60 mA F Forward surge current t 10 s I 3A p FSM Power dissipation P 70 mW diss Junction temperature T 125 C j OUTPUT Collector emitter voltage V 32 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation P 70 mW diss Junction temperature T 125 C j COUPLER Isolation test voltage (RMS) V 5000 V ISO RMS Total power dissipation P 200 mW tot Ambient temperature range T - 55 to + 110 C amb Storage temperature range T - 55 to + 125 C stg (2) Soldering temperature 2 mm from case, t 10 s T 260 C sld Notes (1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. (1) ELECTRICAL CHARACTERISTCS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 50 mA V 1.25 1.6 V F F Junction capacitance V = 0, f = 1 MHz C 50 pF R j OUTPUT Collector emitter voltage I = 1 mA V 32 V C CEO Emitter collector voltage I = 100 A V7V E ECO Collector ermitter cut-off current V = 20 V, I = 0, E = 0 I 200 nA CE F CEO COUPLER Collector emitter saturation voltage I = 10 mA, I = 1 mA V 0.3 V F C CEsat V = 5 V, I = 10 mA, CE F Cut-off frequency f 110 kHz c R = 100 L Coupling capacitance f = 1 MHz C 0.6 pF k Note (1) Minimum and maximum values are testing requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Document Number: 83535 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 1.7, 09-Mar-10 777

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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