SUP50N03-5m1P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) Q (Typ.) DS DS(on) D g 100 % R and UIS Tested g d 0.0051 at V = 10 V GS 50 Material categorization: 30 21.7 d 0.0063 at V = 4.5 V GS 50 For definitions of compliance please see www.vishay.com/doc 99912 TO-220AB APPLICATIONS Power Supply - Secondary Synchronous Rectification DC/DC Converter D G GD S Top View Ordering Information: S SUP50N03-5m1P-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS d T = 25 C C 50 Continuous Drain Current (T = 150 C) I J D d T = 70 C C 50 A I Pulsed Drain Current 100 DM I Avalanche Current 40 AS a E L = 0.1 mH 80 mJ Single Avalanche Energy AS b T = 25 C C 59.5 a P W Maximum Power Dissipation D c T = 25 C 2.7 A T , T Operating Junction and Storage Temperature Range -55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R 46 Junction-to-Ambient (PCB Mount) thJA C/W R Junction-to-Case (Drain) 2.1 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR-4 material). d. Package limited. Document Number: 66570 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-2232-Rev. B, 28-Oct-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUP50N03-5m1P Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 DS DS D V Gate Threshold Voltage V V = V , I = 250 A 1 2.5 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 250 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I V = 30 V, V = 0 V, T = 125 C 50 A DSS DS GS J V = 30 V, V = 0 V, T = 150 C 250 DS GS J a I V 10 V, V = 10 V 50 A On-State Drain Current D(on) DS GS V = 10 V, I = 22 A 0.0042 0.0051 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0052 0.0063 GS D a Forward Transconductance g V = 15 V, I = 20 A 110 S fs DS D b Dynamic Input Capacitance C 2780 iss Output Capacitance C V = 0 V, V = 15 V, f = 1 MHz 641 pF oss GS DS Reverse Transfer Capacitance C 260 rss V = 15 V, V = 10 V, I = 20 A 44 66 DS GS D c Q Total Gate Charge g 21.7 32.6 nC c Q 7 Gate-Source Charge V = 15 V, V = 4.5 V, I = 20 A gs DS GS D c Q 6.7 Gate-Drain Charge gd Gate Resistance R f = 1 MHz 0.7 3.5 7 g c t 816 Turn-On Delay Time d(on) c t 918 Rise Time r V = 15 V, R = 1.5 DD L ns c I 10 A, V = 10 V, R = 1 t 35D GEN g 53 Turn-Off Delay Time d(off) c t 918 Fall Time f b Drain-Source Body Diode Ratings and Characteristics T = 25 C C Continuous Current I 50 S A Pulsed Current I 100 SM a V I = 10 A, V = 0 V 0.75 1.5 V Forward Voltage SD F GS Reverse Recovery Time t 34 51 ns rr Peak Reverse Recovery Current I I = 10 A, dI/dt = 100 A/s 23 A RM(REC) F Reverse Recovery Charge Q 34 51 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 66570 2 S13-2232-Rev. B, 28-Oct-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000