Product Information

SMBJ3V3HE3/5B

SMBJ3V3HE3/5B electronic component of Vishay

Datasheet
ESD Suppressors / TVS Diodes 3V3V 1000W UniDir TransZorb 5% Tol

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.9278
10 : USD 0.934
100 : USD 0.5216
500 : USD 0.4116
1000 : USD 0.33
3200 : USD 0.2994
6400 : USD 0.2892
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Tradename
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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SMBJ3V3 www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES Uni-directional polarity only Peak pulse power: 600 W (10/1000 s) Excellent clamping capability Very fast response time Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS SMB (DO-214AA) Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units specifically for protecting 3.3 V supplied sensitive equipment against PRIMARY CHARACTERISTICS transient overvoltages. V (uni-directional) 4.1 V BR MECHANICAL DATA V 3.3 V WM Case: SMB (DO-214AA) P 600 W PPM Molding compound meets UL 94 V-0 flammability rating P 5 W D Base P/N-E3 - RoHS-compliant and commercial grade I (uni-directional only) 60 A FSM Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified T max. 175 C J Terminals: matte tin plated leads, solderable per Polarity Uni-directional J-STD-002 and JESD 22-B102 Package SMB (DO-214AA) E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1)(2) Peak pulse power dissipation P 600 W PPM Peak pulse current with a 10/1000 s waveform (fig. 1) I 50 A PP Peak pulse current with a 8/20 s waveform (fig. 1) I 200 A PPM (2) Peak forward surge current 8.3 ms single half sine-wave I 60 A FSM Power dissipation on infinite heatsink, T = 75 C P 5W A D Operating junction and storage temperature range T , T -65 to +175 C J STG Notes (1) Non-repetitive current pulse, per fig. 1 (2) Mounted on 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pads to each terminal ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM TYPICAL TYPICAL VOLTAGE REVERSE STAND-OFF CLAMPING CLAMPING JUNCTION TEMPERATURE DEVICE V AT I LEAKAGE VOLTAGE VOLTAGE VOLTAGE CAPACITANCE BR T DEVICE COEFFICIENT MARKING CURRENT V V AT I V AT I C AT 0 V WM C PP C PPM J TYPE OF V CODE MIN. BR I AT V 10/1000 s 8/20 s 1 MHz R WM -4 VmA A V V A V A 10 /C pF SMBJ3V3 KC 4.1 1.0 200 3.3 7.3 50 10.3 200 -5.3 5200 Revision: 16-Jan-18 Document Number: 88940 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SMBJ3V3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1) Typical thermal resistance, junction to lead R 20 JL C/ W (2) Typical thermal resistance, junction to ambient R 100 JA Notes (1) Thermal resistance from junction to lead - mounted on 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pads to each terminal (2) Thermal resistance from junction to ambient - mounted on the recommended PCB pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMBJ3V3-E3/52 0.096 52 750 7 diameter plastic tape and reel SMBJ3V3-E3/5B 0.096 5B 3200 13 diameter plastic tape and reel (1) SMBJ3V3HE3/52 0.096 52 750 7 diameter plastic tape and reel (1) SMBJ3V3HE3/5B 0.096 5B 3200 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 10 150 T = 25 C J t = 10 s r Pulse Width (t ) d t = 8 s r is defined as the Point where the Peak Current Peak Value decays to 50 % of I PPM I PPM 100 I Half Value - 1 PP I 2 PPM 50 t = 1000 s d t = 20 s d t d 0.1 0 0 25 50 75 100 125 150 175 0 1.0 3.0 4.0 2.0 T - Junction Temperature (C) t - Time (ms) J Fig. 1 - Pulse Wave Form Fig. 3 - Relative Variation of Leakage Current vs. Junction Temperature 10 10 8 1 6 10/1000 s 8/20 s 4 0.1 0.01 0.1 1 10 0.1 1 10 100 1000 t - Pulse Width (ms) I (A) d PP Fig. 2 - Peak Pulse Power Rating Curve Fig. 4 - Clamping Voltage vs. Peak Pulse Current (T initial = 25 C) J Revision: 16-Jan-18 Document Number: 88940 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Peak Pulse Current, % I PPM RSM P - Peak Pulse Power (kW) PPM Clamping Voltage (V) I (T )/I (T = 25 C) R J R J

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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