Product Information

SMA6J5.0A-M3/61

SMA6J5.0A-M3/61 electronic component of Vishay

Datasheet
ESD Suppressors TVS Diodes 600W 5.0V 5% Unidir

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5695 ea
Line Total: USD 0.57

1880 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1880 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5695
10 : USD 0.401
100 : USD 0.2029
1000 : USD 0.14
1800 : USD 0.108
23400 : USD 0.0996

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
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333 3 SMA6J5.0A thru SMA6J28A www.vishay.com Vishay General Semiconductor Surface-Mount TRANSZORB Transient Voltage Suppressors FEATURES Low profile package Ideal for automated placement Available in uni-directional polarity only Excellent clamping capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance SMA (DO-214AC) please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage 3D Models transients induced by inductive load switching and lightin g on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. PRIMARY CHARACTERISTICS MECHANICAL DATA V 6.4 V to 34.4 V BR V 5.0 V to 28 V Case: SMA (DO-214AC) WM Molding compound meets UL 94 V-0 flammability rating P (10 x 1000 s) 600 W PPM Base P/N-M3 - halogen-free, RoHS-compliant, and P (8 x 20 s) 4000 W PPM commercial grade P at T = 50 C 4 W D A Terminals: Matte tin plated leads, solderable per I 50 A J-STD-002 and JESD 22-B102 FSM M3 suffix meets JESD 201 class 2 whisker test T max. 150 C J Polarity: Color band denotes cathode end Polarity Uni-directional Package SMA (DO-214AC) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1)(2) Peak pulse power dissipation with a 10/1000 s waveform 600 P W PPM Peak pulse power dissipation with a 8/20 s waveform 4000 Peak pulse current with a 10/1000 s waveform (1)(2) I See next table A PPM Peak pulse current with a 8/20 s waveform Power dissipation on infinite heatsink, TA = 50 C P 4.0 W D Peak forward surge current 8.3 ms single half sine-wave I 50 A FSM Operating junction and storage temperature range T , T -55 to +150 C J STG Notes (1) Non-repetitive current pulse, per fig. 1 and derated above T = 25 C per fig. 2. A (2) Mounted on PCB with 5.0 mm x 5.0 mm copper pads to each terminal Revision: 20-Jul-2020 Document Number: 89460 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SMA6J5.0A thru SMA6J28A www.vishay.com Vishay General Semiconductor I INDEX OF SYMBOLS I F SYMBOL PARAMETER V Stand-off voltage WM V Breakdown voltage BR V WM V BR V Clamping voltage C V C I Leakage current at V D WM V F V I D I Peak pulse current PP I T T Voltage temperature coefficient V Forward voltage drop F I PP R Dynamic resistance D ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A (2) (2) MAXIMUM V AT I R V AT I R C PP D C PP D BREAKDOWN STAND-OFF REVERSE (3) VOLTAGE VOLTAGE T DEVICE LEAKAGE (1) 10/1000 s 8/20 s DEVICE V AT I V BR T WM MARKING I AT V D WM TYPE CODE MIN. MAX. 25 C 85 C MAX. MAX. MAX. -4 VmA A V V A VA 10 /C SMA6J5.0A 6AE 6.4 7.07 10 150 375 5.0 9.1 65.9 0.031 13.4 298 0.021 5.7 SMA6J6.0A 6AG 6.7 7.41 10 600 1500 6.0 9.5 63.20.03313.7 2900.022 5.9 SMA6J6.5A 6AK 7.2 7.96 10 100 250 6.5 10.2 58.80.03814.5 2760.024 6.1 SMA6J7.5A 6AP 8.33 9.21 1 50 125 7.5 11.8 50.80.05117.0 2350.033 6.5 SMA6J8.0A 6AR 8.89 9.83 1 20 50 8.0 12.5 48.00.05618.2 2200.038 7.0 SMA6J8.5A 6AT 9.4 10.4 1 20 50 8.5 13.3 45.10.06418.7 2050.040 7.3 SMA6J10A 6AX 11.112.3 1 1 5 10 15.738.20.08919.6 1840.040 7.8 SMA6J11A 6AZ 12.213.5 1 1 5 11 17.234.80.10721.5 1720.047 8.1 SMA6J12A 6BE 13.314.7 1 0.2 1 12 18.831.90.12823.5 1570.056 8.3 SMA6J13A 6BG 14.4 15.9 1 0.2 1 13 20.4 29.40.15323.9 1470.054 8.4 SMA6J15A 6BM 16.7 18.5 1 0.2 1 15 23.6 25.40.20127.7 1230.075 8.8 SMA6J16A 6BP 17.819.7 1 0.2 1 16 25.223.80.22929.5 1190.083 8.8 SMA6J17A 6BR 18.920.9 1 0.2 1 17 26.722.50.25931.4 1110.094 9.0 SMA6J18A 6BT 20.022.1 1 0.2 1 18 28.321.20.29233.2 1020.109 9.2 SMA6J20A 6BV 22.224.5 1 0.2 1 20 31.419.10.36136.8 93 0.132 9.4 SMA6J22A 6BX 24.426.9 1 0.2 1 22 34.517.40.43740.4 89 0.152 9.5 SMA6J24A 6BZ 26.729.5 1 0.2 1 24 37.815.90.52344.3 80 0.185 9.6 SMA6J26A 6CE 28.931.9 1 0.2 1 26 40.914.70.61447.9 75 0.213 9.7 SMA6J28A 6CG 31.1 34.4 1 0.2 1 28 44.0 13.60.70451.6 68 0.253 9.8 Notes (1) Pulse test: t 50 ms p (2) To calculate maximum clamping voltage at other surge currents, use the following formula: V = R x I + V CLmax. D PP BRmax. (3) To calculate V vs. junction temperature, use the following formula: V at T = V at 25 C x (1 + T x (T - 25) BR BR J BR J (4) V = 3.5 V at I = 25 A, pulse test: 300 s pulse width F F Revision: 20-Jul-2020 Document Number: 89460 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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