SM8A27T www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Junction passivation optimized design passivated anisotropic rectifier technology T = 175 C capability suitable for high J reliability and automotive requirement Low leakage current Low forward voltage drop High surge capability Meets ISO7637-2 surge specification DO-218 Compatible Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 27 V TYPICAL APPLICATIONS BR P (10 x 1000 s) 6600 W Use in sensitive electronics protection against voltage PPM transients induced by inductive load switching and lighting, P 8 W D especially for automotive load dump protection application. V 22 V WM I 130 A MECHANICAL DATA RSM I 700 A Case: DO-218AC FSM Molding compound meets UL 94 V-0 flammability rating T max. 175 C J Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Polarity Uni-directional Terminals: Matte tin plated leads, solderable per Package DO-218AC J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Heatsink is anode MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with 10/1000 s waveform P 6600 W PPM Power dissipation on infinite heatsink at T = 25 C (fig. 1) P 8.0 W C D Non-repetitive peak reverse surge current for 10 s/10 ms exponentially I 130 A RSM decaying waveform Maximum working stand-off voltage V 22.0 V WM Peak forward surge current 8.3 ms single half sine-wave I 700 A FSM Operating junction and storage temperature range T , T -55 to +175 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN VOLTAGE TEST CURRENT STAND-OFF VOLTAGE V AT I BR T DEVICE TYPE I V T WM (V) (mA) (V) MIN. MAX. SM8A27T 24 30 10 22 Revision: 24-Mar-15 Document Number: 87915 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SM8A27T www.vishay.com Vishay General Semiconductor ADDITIONAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Zener voltage temperature coefficient I = 10 mA V -- 36 mV/C Z ZTC Clamping voltage for 10 s/10 ms I = 75 A V - - 40.0 V PP C exponentially decaying waveform I = 6.0 A - - 0.98 F (1) Instantaneous forward voltage V V F I = 100 A - 0.93 - F T = 25 C -- 1.0 J Reverse leakage current Rated V I A WM R T = 175 C - - 50.0 J Note (1) Measured on a 300 s square pulse width THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to case R 0.90 C/W JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 13 diameter plastic tape and reel, (1) SM8A27THE3/I 2.605 I 750 anode towards the sprocket hole Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 8.0 6000 5000 6.0 4000 4.0 3000 2000 2.0 1000 0 0 25 50 75 100 125 150 175 50 150 200 0 100 Case Temperature (C) Case Temperature (C) Fig. 1 - Power Derating Curve Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) Revision: 24-Mar-15 Document Number: 87915 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Power Dissipation (W) Load Dump Power (W)