SiHD2N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) R x Q on g DPAK Low input capacitance (C ) iss (TO-252) Reduced switching and conduction losses G D Ultra low gate charge (Q ) g Avalanche energy rated (UIS) S Material categorization: for definitions of compliance G S please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS PRODUCT SUMMARY Server and telecom power supplies V (V) at T max. 850 DS J Switch mode power supplies (SMPS) R typ. () at 25 C V = 10 V 2.38 DS(on) GS Power factor correction power supplies (PFC) Q max. (nC) 90 g Lighting Q (nC) 11 gs - High-intensity discharge (HID) Q (nC) 19 gd - Fluorescent ballast lighting Configuration Single Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHD2N80E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 800 DS V Gate-source voltage V 30 GS T = 25 C 2.8 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 1.8 A C a Pulsed drain current I 5 DM Linear derating factor 0.5 W/C b Single pulse avalanche energy E 14 mJ AS Maximum power dissipation P 62.5 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 0.13 c Soldering recommendations (peak temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 0.9 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S18-0587-Rev. B, 18-Jun-2018 Document Number: 91987 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHD2N80E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -2.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 800 - - V DS GS D V /T -1.0 - V temperature coefficient DS J Reference to 25 C, I = 1 mA V/C DS D Gate-source threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 800 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 640 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 1.0 A - 2.38 2.75 DS(on) GS D Forward transconductance g V = 30 V, I = 1.0 A - 1.0 - S fs DS D Dynamic Input capacitance C - 315 - iss V = 0 V, GS Output capacitance C V = 100 V, -20 - oss DS f = 1 MHz Reverse transfer capacitance C -6 - rss pF Effective output capacitance, energy C -13 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C -45 - o(tr) b related Total gate charge Q - 9.8 19.6 g Gate-source charge Q V = 10 V I = 1.0 A, V = 480 V -2.4 - nC gs GS D DS Gate-drain charge Q -3.9 - gd Turn-on delay time t -11 22 d(on) Rise time t -7 14 r V = 480 V, I = 1.0 A, DD D ns Turn-off delay time t -19 38 V = 10 V, R = 9.1 d(off) GS g Fall time t -27 54 f Gate input resistance R f = 1 MHz, open drain 1.8 3.6 7.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 2.8 S showing the A integral reverse G Pulsed diode forward current I -- 5 S SM p - n junction diode Diode forward voltage V T = 25 C, I = 1 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 278 556 ns rr T = 25 C, I = I = 1.0 A, J F S Reverse recovery charge Q -0.9 1.8 C rr dI/dt = 100 A/s, V = 25 V R Reverse recovery current I -5 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S18-0587-Rev. B, 18-Jun-2018 Document Number: 91987 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000