Si8415DB Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) Q (Typ.) DS DS(on) D g MICRO FOOT Chipscale Packaging 0.037 at V = - 4.5 V - 7.3 GS Reduces Footprint Area Profile (0.62 mm) and - 12 0.046 at V = - 2.5 V - 6.6 19 On-Resistance Per Footprint Area GS 0.060 at V = - 1.8 V Ultra-Low On-Resistance - 5.8 GS Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 MICRO FOOT Bump Side View Backside View APPLICATIONS S 32 Load Switch, Charger Switch, and DD 8415 PA Switch for Portable Devices xxx G S G 41 Device Marking: 8415 xxx = Date/Lot Traceability Code D Ordering Information: Si8415DB-T1-E1 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 12 DS V Gate-Source Voltage V 8 GS T = 25 C - 7.3 - 5.3 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 5.9 - 4.3 A A I Pulsed Drain Current - 25 DM a I - 2.5 - 1.3 Continuous Source Current (Diode Conduction) S T = 25 C 2.77 1.47 A a P W Maximum Power Dissipation D T = 70 C 1.77 0.94 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b IR/Convection 260 Package Reflow Conditions THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 35 45 a R Maximum Junction-to-Ambient thJA Steady State 72 85 C/W R Maximum Junction-to-Foot (Drain) Steady State 16 20 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. c. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. Document Number: 73210 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1847-Rev. C, 19-Aug-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si8415DB Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.4 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 12 V, V = 0 V, T = 70 C - 5 DS GS J a I V - 5 V, V = - 4.5 V - 5 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 1 A 0.031 0.037 GS D a R V = - 2.5 V, I = - 1 A 0.038 0.046 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 1 A 0.050 0.060 GS D a g V = - 10 V, I = - 1 A 11 S Forward Transconductance fs DS D a V I = - 1 A, V = 0 V - 0.8 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 19 30 g Gate-Source Charge Q V = - 6 V, V = - 4.5 V, I = - 1 A 1.9 nC gs DS GS D Q Gate-Drain Charge 4.8 gd Gate Resistance R f = 1 MHz 19 g t Turn-On Delay Time 15 25 d(on) Rise Time t 32 50 V = - 6 V, R = 6 r DD L I - 1 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 180 270 ns d(off) Fall Time t 115 175 f t I = - 1 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 80 120 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 25 25 V = 5 thru 2.5 V GS 2 V 20 20 15 15 10 10 1.5 V T = 125 C C 5 5 25 C 1 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 73210 2 S13-1847-Rev. C, 19-Aug-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D