Si5424DC Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R ( ) Q (Typ.) DS DS(on) g I (A) Material categorization: D 0.024 at V = 10 V 6 For definitions of compliance please see GS 30 11 nC 0.030 at V = 4.5 V 6 www.vishay.com/doc 99912 GS APPLICATIONS ChipFET 1206-8 Load Switch 1 - Notebook PC D D D D D D Marking Code D G AF XXX S Lot Traceability G and Date Code Part Code Bottom View Ordering Information: S Si5424DC-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 25 GS a T = 25 C C 6 a T = 70 C C 6 I Continuous Drain Current (T = 150 C) D J a T = 25 C A 6 a T = 70 C A 6 A I Pulsed Drain Current 40 DM a T = 25 C C 5.2 I Continuous Source-Drain Diode Current S b, c T = 25 C A 2.1 I Single Pulse Avalanche Current 16 AS L = 0.1 mH E Avalanche Energy 12.8 mJ AS T = 25 C 6.25 C T = 70 C 4 C a P W Maximum Power Dissipation D b, c T = 25 C A 2.5 b, c T = 70 C A 1.6 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 40 50 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 15 20 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The ChipFET 1206-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 73776 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-0297-Rev. C, 11-Feb-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si5424DC Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 19.4 DS DS J I = 250 A mV/C D V /T V Temperature Coefficient - 4.6 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 1.1 2.3 V GS(th) DS GS D I V = 0 V, V = 25 V Gate-Source Leakage 100 ns GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V 10 V, I = 4.8 A 0.020 0.024 GS D a R Drain-Source On-State Resistance DS(on) V 4.5 V, I = 4.22 A 0.024 0.030 GS D a g V = 15 V, I = 4.8 A 17 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 950 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 230 pF oss DS GS C Reverse Transfer Capacitance 180 rss V = 15 V, V = 10 V, I = 4.8 A 21 32 DS GS D Total Gate Charge Q g 11 17 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 4.8 A 3.2 gs DS GS D Gate-Drain Charge Q 4.2 gd R Gate Resistance f = 1 MHz 2.2 g Turn-On Delay Time t 17 26 d(on) t Rise Time V = 15 V, R = 2.63 75 113 r DD L I 5.7 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 22 33 d(off) t Fall Time 12 18 f ns t Turn-On Delay Time 10 15 d(on) t Rise Time V = 15 V, R = 2.5 38 57 r DD L I 6 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 26 40 d(off) t Fall Time 914 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 6 S C A I Pulse Diode Forward Current 40 SM V I = 4.3 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 24 36 ns rr Q Body Diode Reverse Recovery Charge I = 4.3 A, dI/dt = 100 A/s, 11 17 nC rr F T = 25 C Reverse Recovery Fall Time t 9 J a ns t Reverse Recovery Rise Time 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73776 For technical questions, contact: pmostechsupport vishay.com 2 S13-0297-Rev. C, 11-Feb-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000