Si1426DH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.075 at V = 10 V 3.6 GS TrenchFET Power MOSFET 30 0.115 at V = 4.5 V 2.9 GS Thermally Enhanced SC-70 Package PWM Optimized Compliant to RoHS Directive 2002/95/EC APPLICATIONS Boost Converter in Portable Devices - Low Gate Charge (3 nC) Low Current Synchronous Rectifier SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code 5 D 2 D AC XX Lot Traceability G 3 4 S and Date Code Part Code Top View Ordering Information: Si1426DH-T1-E3 (Lead (Pb)-free) Si1426DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS T = 25 C 3.6 2.8 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 2.6 2.1 A A Pulsed Drain Current I 10 DM a I 1.3 0.8 Continuous Diode Current (Diode Conduction) S T = 25 C 1.6 1.0 A a P W Maximum Power Dissipation D T = 85 C 0.8 0.5 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 60 80 a R Maximum Junction-to-Ambient thJA Steady State 100 125 C/W R Maximum Junction-to-Foot (Drain) Steady State 34 45 thJF Note: a. Surface mounted on 1 x 1 FR4 board. Document Number: 71805 www.vishay.com S10-0935-Rev. B, 19-Apr-10 1 YYSi1426DH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted A Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.80 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 24 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 24 V, V = 0 V, T = 85 C 5 DS GS J a I V = 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V = 10 V, I = 3.6 A 0.061 0.075 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 2.0 A 0.092 0.115 GS D a g V = 10 V, I = 3.6 A 5S Forward Transconductance fs DS D a V I = 1.3 A, V = 0 V 0.78 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 1.9 3 g Q V = 15 V, V = 4.5 V, I = 3.6 A Gate-Source Charge 0.75 nC gs DS GS D Gate-Drain Charge Q 0.75 gd t Turn-On Delay Time 10 15 d(on) Rise Time t 12 18 V = 15 V, R = 15 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN g 15 22 ns d(off) Fall Time t 915 f t I = 1.4 A, dI/dt = 100 A/s Source-Drain Reverse Recovery 40 70 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 10 V = 10 V thru 5 V GS 4 V 8 8 6 6 4 4 3 V T = 125 C C 2 2 25 C - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1234 5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71805 2 S10-0935-Rev. B, 19-Apr-10 I - Drain Current (A) D I - Drain Current (A) D