Product Information

SI1303DL-T1-E3

SI1303DL-T1-E3 electronic component of Vishay

Datasheet
MOSFET 20V 0.72A
Small-signal MOSFET transistor optimized for high-speed switching.
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1485 ea
Line Total: USD 445.5

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 1
3000 : USD 0.1485

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Tradename
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

SI1303DL-T1-E3 is part of Vishay's Siliconix OptoMOS product line. It is a dual N-channel power MOSFET in a low profile 3x2mm DPAK surface mount package. The N-channel MOSFET features a VDS (Drain-Source Voltage) of 30V with a maximum current rating of 2.6A and an RDS (on) of 0.12O. The MOSFET has very low gate charge (Qg) and is ideal for low duty cycle high frequency DC-DC converters and other high frequency switching circuits.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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