Product Information

MBRB15H35CT-E3/81

MBRB15H35CT-E3/81 electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers 35 Volt 15A Dual Common-Cathode

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

800: USD 0.9657 ea
Line Total: USD 772.56

0 - Global Stock
MOQ: 800  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 800
Multiples : 1
800 : USD 0.9657

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
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MBRB15H60CT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES 2 Power pack D PAK (TO-263AB) K Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop 2 Low leakage current 1 High forward surge capability High frequency operation PIN 1 K Meets MSL level 1, per J-STD-020, LF maximum peak PIN 2 HEATSINK of 245 C AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 A Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching I 2 x 7.5 A F(AV) mode power supplies, freewheeling diodes, DC/DC V 60 V RRM converters, and polarity protection application. I 150 A FSM MECHANICAL DATA V 0.61 V F 2 Case: D PAK (TO-263AB) I 50 A R Molding compound meets UL 94 V-0 flammability rating T max. 175 C J Base P/NHE3 X - RoHS-compliant, AEC-Q101 qualified 2 Package D PAK (TO-263AB) ( X denotes revision code, e.g. A, B, ...) Circuit configuration Common cathode Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBRB15H60CT UNIT Maximum repetitive peak reverse voltage V 60 RRM Working peak reverse voltage V 60 V RWM Maximum DC blocking voltage V 60 DC total device 15 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 7.5 Non-repetitive avalanche energy at 25 C, I = 4 A, L = 10 mH per diode E 80 mJ AS AS Peak forward surge current 8.3 ms single half sine-wave superimposed on I 150 FSM rated load per diode A Peak repetitive reverse surge current per diode at t = 2.0 s, 1 kHz I 0.5 p RRM Peak non-repetitive reverse energy (8/20 s waveform) E 10 mJ RSM Electrostatic discharge capacitor voltage V 25 kV C Human body model: C = 100 F, R = 1.5 k Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -65 to +175 C J STG Isolation voltage from terminal to heatsink t = 1 min V 1500 V AC Revision: 13-Jun-17 Document Number: 88782 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MBRB15H60CT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C MBRB15H60CT PARAMETER SYMBOL TEST CONDITIONS UNIT TYP. MAX. I = 7.5 A T = 25 C - 0.73 F J I = 7.5 A T = 125 C 0.58 0.61 F J Maximum instantaneous forward (1) V V F voltage per diode I = 15 A T = 25 C - 0.87 F J I = 15 A T = 125 C 0.68 0.72 F J T = 25 C - 50 A J (2) Maximum reverse current per diode I Rated V R R T = 125 C 2.0 10 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBRB15H60CT UNIT Maximum thermal resistance per diode R 3.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE (1) TO-263AB MBRB15H60CTHE3 A/P 1.35 P 50/tube Tube (1) TO-263AB MBRB15H60CTHE3 A/I 1.35 I 800/reel Tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) C 20 175 T = T max. J J 8.3 ms Single Half Sine-Wave 150 15 125 10 100 75 5 50 0 25 0 25 75 100 125 150 175 1 10 50 100 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Derating Curve Per Diode Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 13-Jun-17 Document Number: 88782 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Peak Forward Surge Current (A)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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