Product Information

ILD621GB-X007

ILD621GB-X007 electronic component of Vishay

Datasheet
Transistor Output Optocouplers Phototransistor Out Dual CTR > 100%

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2858 ea
Line Total: USD 0.29

2 - Global Stock
Ships to you between
Wed. 15 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 0.2858
10 : USD 0.2829
25 : USD 0.2773
50 : USD 0.2773
100 : USD 0.2773

     
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RoHS - XON
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Current Transfer Ratio
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Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
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Output Device
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ILD621/ILD621GB/ILQ621/ILQ621GB Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) FEATURES Dual Channel Alternate source to TLP621-2/-4 and TLP621GB-2/-4 1 A 8 C High collector emitter voltage, BV = 70 V CEO C 2 7 E Dual and quad packages feature: - Lower pin and parts count C A 3 6 - Better channel to channel CTR match E C 4 5 - Improved common mode rejection Isolation test voltage, 5300 V RMS Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 16 Quad Channel A C AGENCY APPROVALS C 2 15 E UL1577, file no. E52744 system code H or J, double A 3 14 C protection C 4 13 E DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending A 5 12 C available with option 1 C 6 11 E BSI IEC 60950 IEC 60065 A 7 10 C FIMKO C 8 E 9 i179054 DESCRIPTION The ILD621/ILQ621 and ILD621GB/ILQ621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC. The ILD621/ILQ621GB is well suited for CMOS interfacing given the CTR of 30 % minimum at I of 1.0 mA. High CEsat F gain linear operation is guaranteed by a minimum CTR of CE 100 % at 5.0 mA. The ILD/Q621 has a guaranteed CTR CE 50 % minimum at 5.0 mA. The transparent ion shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC V voltages are IO present. ORDER INFORMATION PART REMARKS ILD621 CTR > 50 %, dual, DIP-8 ILD621GB CTR > 100 %, dual, DIP-8 ILQ621 CTR > 50 %, quad, DIP-16 ILQ621GB CTR > 100 %, quad, DIP-16 ILD621-X006 CTR > 50 %, dual, DIP-8 400 mil Document Number: 83654 For technical questions, contact: optocoupler.answers vishay.com www.vishay.com Rev. 1.5, 20-Dec-07 1ILD621/ILD621GB/ILQ621/ILQ621GB Optocoupler, Phototransistor Output Vishay Semiconductors (Dual, Quad Channel) ORDER INFORMATION PART REMARKS ILD621-X007 CTR > 50 %, dual, SMD-8 (option 7) ILD621-X009 CTR > 50 %, dual, SMD-8 (option 9) ILD621GB-X007 CTR > 100 %, dual, SMD-8 (option 7) ILQ621-X006 CTR > 50 %, quad, DIP-16 400 mil ILQ621-X007 CTR > 50 %, quad, SMD-16 (option 7) ILQ621-X009 CTR > 50 %, quad, SMD-16 (option 9) ILQ621GB-X006 CTR > 100 %, quad, DIP-16 400 mil ILQ621GB-X007 CTR > 100 %, quad, SMD-16 (option 7) ILQ621GB-X009 CTR > 100 %, quad, SMD-16 (option 9) Note For additional information on the available options refer to option information. (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage V 6.0 V R Forward current I 60 mA F Surge current I 1.5 A FSM Power dissipation P 100 mW diss Derate from 25 C 1.33 mW/C OUTPUT Collector emitter reverse voltage V 70 V ECO I 50 mA C Collector current t < 1.0 ms I 100 mA C Power dissipation P 150 mW diss Derate from 25 C - 2.0 mW/C COUPLER Isolation test voltage t = 1.0 s V 5300 V ISO RMS ILD621 400 mW Package dissipation ILD621GB 400 mW Derate from 25 C 5.33 mW/C ILQ621 500 mW Package dissipation ILQ621GB 500 mW Derate from 25 C 6.67 mW/C Creepage distance 7.0 mm Clearance distance 7.0 mm 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature T - 55 to + 150 C stg Operating temperature T - 55 to + 100 C amb Junction temperature T 100 C j (2) Soldering temperature 2.0 mm from case bottom T 260 C sld Notes (1) T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). www.vishay.com For technical questions, contact: optocoupler.answers vishay.com Document Number: 83654 2 Rev. 1.5, 20-Dec-07

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC
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BC COMPONENTS (VISHAY)
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DLE
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