Product Information

ILD55-X009

ILD55-X009 electronic component of Vishay

Datasheet
Transistor Output Optocouplers Photodarlington Out Dual CTR > 100%

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.828 ea
Line Total: USD 3.83

1411 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
905 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

ILD55-X009
Vishay

1 : USD 3.2036
10 : USD 2.1476
100 : USD 1.6492
250 : USD 1.6018
500 : USD 1.495
1000 : USD 1.2814
2000 : USD 1.1984
10000 : USD 1.1865

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Current Transfer Ratio
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Mounting Style
Height
Length
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
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IL30, ILD55, ILQ30, ILQ31, ILQ55 www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Output, (Single, Dual, Quad Channel) FEATURES Single Channel 1 6 A B 125 mA load current rating C 2 5 C Fast rise time, 10 s Fast fall time, 35 s NC 3 4 E Single, dual and quad channel Solid state reliability Dual Channel A 1 8 E Standard DIP packages Material categorization: for definitions of compliance C 7 2 C please see www.vishay.com/doc 99912 C 6 C 3 AGENCY APPROVALS A 5 4 E Quad Channel UL1577, file no. E52744 system code H, double protection cUL tested to CSA 22.2 bulletin 5A A 1 16 E DIN EN 60747-5-2 (VDE 0884) / DIN EN 60747-5-5 C pending available with option 1 2 15 C 3 14 BSI IEC 60950 IEC 60065 C C FIMKO A 4 13 E 5 12 A E DESCRIPTION SMD C 6 11 C The IL30 single, ILD55 dual, and ILQ30, ILQ31, ILQ55 quad 7 10 C C are optically coupled isolators with gallium arsenide infrared 8 9 A E emitters and silicon photodarlington sensors. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. The ILD55 is designed to reduce board space requirements in high density applications. ORDERING INFORMATION DIP I L x - X 00 T PART NUMBER PACKAGE OPTION TAPE 7.62 mm AND Option 7 Option 9 REEL x = D (Dual) or Q (Quad) > 0.1 mm > 0.7 mm SINGLE CHANNEL DUAL CHANNEL QUAD CHANNEL AGENCY CERTIFIED/PACKAGE CTR UL, cUL, BSI, FIMKO 100 100 100 200 DIP-6 IL30 --- DIP-8 - ILD55 - - SMD-8, option 7 - ILD55-X007 - - (1) SMD-8, option 9 - ILD55-X009T -- DIP-16 - - ILQ30, ILQ55 ILQ31 SMD-16, option 7 - - ILQ55-X007 - ILQ30-X009, SMD-16, option 9 - - - (1) ILQ55-X009T VDE, UL, cUL, BSI, FIMKO 100 100 100 200 DIP-16 - - ILQ30-X001 - Notes Additional options may be possible, please contact sales office. (1) Also available in tubes, do not put T on the end. Rev. 1.8, 28-Jul-14 Document Number: 83621 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IL30, ILD55, ILQ30, ILQ31, ILQ55 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Peak reverse voltage V 3V RM Forward continuous current I 60 mA F Power dissipation P 100 mW diss Derate linearly from 25 C 1.33 mW/C OUTPUT IL30 BV 30 V CEO ILQ30 BV 30 V CEO Collector emitter breakdown voltage ILD55 BV 55 V CEO ILQ55 BV 55 V CEO Collector (load) current I 125 mA C Power dissipation P 150 mW diss Derate linearly from 25 C 2mW/C COUPLER IL30 P 250 mW tot ILD55 P 400 mW tot Total package power dissipation ILQ30 P 500 mW tot ILQ31 P 500 mW tot ILQ55 P 500 mW tot IL30 3.3 mW/C ILD55 3.3 mW/C Derate linearly from 25 C ILQ30 6.67 mW/C ILQ31 6.67 mW/C ILQ55 6.67 mW/C Isolation test voltage V 5300 V ISO RMS Creepage distance 7mm Clearance distance 7mm Comparative tracking index CTI 175 Storage temperature T -55 to +125 C stg COUPLER Operating temperature T -55 to +100 C amb Lead soldering time at 260 C 10 s Note Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 20 mA V 1.25 1.5 V F F Reverse current V = 3 V I 0.1 10 A R R Capacitance V = 0 V C 25 pF R O OUTPUT Collector emitter breakdown voltage I = 100 A BV 30/55 V C CEO Collector emitter leakage current V = 10 V, I = 0 A I 1 100 nA CE F CEO Collector emitter capacitance V = 10 V, f = 1 MHz C 3.4 pF CE CE COUPLER Collector emitter saturation voltage I = 50 mA, I = 50 mA V 0.9 1 V C F CEsat Isolation test voltage 5300 V RMS 12 Isolation resistance R 10 IO Capacitance (input to output) C 0.5 pF IO Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.8, 28-Jul-14 Document Number: 83621 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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