Product Information

IL223AT

IL223AT electronic component of Vishay

Datasheet
Transistor Output Optocouplers Photodarlington Out Single CTR >500%

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3632 ea
Line Total: USD 0.36

2056 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2056 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

IL223AT
Vishay

1 : USD 0.3632
10 : USD 0.3602
25 : USD 0.3572
100 : USD 0.3483
250 : USD 0.3412
500 : USD 0.3412
1000 : USD 0.3412

7707 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

IL223AT
Vishay

1 : USD 1.0695
10 : USD 0.6371
100 : USD 0.5026
500 : USD 0.4692
1000 : USD 0.4129
2000 : USD 0.4129
4000 : USD 0.4129
10000 : USD 0.4059
24000 : USD 0.4014

2056 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 17
Multiples : 1

Stock Image

IL223AT
Vishay

17 : USD 0.3717
25 : USD 0.3685
100 : USD 0.3593
250 : USD 0.3521

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Current Transfer Ratio
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Mounting Style
Input Type
Output Device
Brand
Number Of Channels Per Chip
Factory Pack Quantity :
Height
Length
Width
Collector-Emitter Breakdown Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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IL221AT/222AT/223AT Vishay Semiconductors Optocoupler, Photodarlington Output, Low Input Current, High Gain, with Base Connection FEATURES Isolation test voltage, 4000 V RMS A 1 8 NC Industry standard SOIC-8 surface mountable 2 7 B C package NC 6 C 3 Standard lead spacing, 0.05 4 5 E NC Available only on tape and reel (conforms to EIA standard RS481A) Compatible with dual wave, vapor phase and IR reflow i179022 soldering Lead (Pb)-free component DESCRIPTION Component in accordance to RoHS 2002/95/EC and The IL221AT/IL222AT/IL223AT is a high current transfer WEEE 2002/96/EC ratio (CTR) optocoupler with a gallium arsenide infrared LED emitter and a silicon NPN photodarlington transistor AGENCY APPROVALS detector. UL1577, file no. E52744 system code Y The device has a CTR tested at 1.0 mA LED current. This CUL - file no. E52744, equivalent to CSA bulletin 5A low drive current permits easy interfacing from CMOS to LSTTL or TTL. DIN EN 60747-5-5 available with option 1 This optocoupler is constructed in a standard SOIC-8 foot print which makes it ideally suited for high density applications. In addition to eliminating through-hole requirements, this package conforms to standards for surface mount devices. ORDER INFORMATION PART REMARKS IL221AT CTR > 100 %, SOIC-8 IL222AT CTR > 200 %, SOIC-8 IL223AT CTR > 500 %, SOIC-8 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage V 6.0 V R Forward continuous current I 60 mA F Power dissipation P 90 mW diss Derate linearly from 25 C 1.2 mW/C OUTPUT Collector emitter breakdown voltage BV 30 V CEO Emitter collector breakdown voltage BV 5.0 V ECO Collector base breakdown voltage BV 70 V CBO I I 50 mA CMAX DC CMAX DC I t < 1.0 ms I 100 mW CMAX CMAX Power dissipation P 150 mW diss Derate linearly from 25 C 2.0 mW/C www.vishay.com For technical questions, contact: optocoupler.answers vishay.com Document Number: 83617 330 Rev. 1.8, 08-May-08 IL221AT/222AT/223AT Optocoupler, Photodarlington Output, Vishay Semiconductors Low Input Current, High Gain, with Base Connection ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Isolation test voltage t = 1.0 s V 4000 V ISO RMS Total package dissipation P 240 mW tot (at 25 C ambient)(LED and detector) Derate linearly from 25 C 3.2 mW/C Storage temperature T - 55 to + 150 C stg Operating temperature T - 55 to + 100 C amb Soldering time at 260 C 10 s Note T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 1.0 mA V 1.0 1.5 V F F Reverse current V = 6 V I 0.1 100 A R R Capacitance V = 0 V, f = 1.0 MHz C 25 pF R O OUTPUT Collector emitter breakdown voltage I = 100 A BV 30 V C CEO Emitter collector breakdown voltage I = 100 A BV 5.0 V E ECO Emitter emitter breakdown voltage I = 10 A BV 70 V C CBO Collector emitter capacitance V = 10 V C 3.4 pF CE CE COUPLER Saturation voltage, collector emitter I = 0.5 mA V 1.0 V CE CEsat Capacitance (input to output) C 0.5 pF IO Resistance (input to output) R 100 G IO Note T = 25 C, unless otherwise specified. amb Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IL221AT CTR 100 % DC Current transfer ratio I = 1.0 mA, V = 5.0 V IL222AT CTR 200 % F CE DC IL223AT CTR 500 % DC SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification 55/100/21 (according to IEC 68 part 1) Comparative tracking index CTI 175 399 V 6000 V IOTM V 560 V IORM P 350 mW SO I 150 mA SI Document Number: 83617 For technical questions, contact: optocoupler.answers vishay.com www.vishay.com Rev. 1.8, 08-May-08 331

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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