BYW32-TR

BYW32, BYW33, BYW34, BYW35, BYW36 www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS 949539 Fast rectification an switching diode for example for MECHANICAL DATA TV-line output circuits and switch mode power supply Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYW36 BYW36-TR 5000 per 10 tape and reel 25 000 BYW36 BYW36-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYW32 V = 200 V I = 2 A SOD-57 R F(AV) BYW33 V = 300 V I = 2 A SOD-57 R F(AV) BYW34 V = 400 V I = 2 A SOD-57 R F(AV) BYW35 V = 500 V I = 2 A SOD-57 R F(AV) BYW36 V = 600 V I = 2 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYW32 V = V 200 V R RRM BYW33 V = V 300 V R RRM Reverse voltage = repetitive peak See electrical characteristics BYW34 V = V 400 V R RRM reverse voltage BYW35 V = V 500 V R RRM BYW36 V = V 600 V R RRM Peak forward surge current t = 10 ms, half sine wave I 50 A p FSM Repetitive peak forward current I 12 A FRM Average forward current = 180 I 2A F(AV) Non repetitive reverse avalanche I = 0.4 A E 10 mJ (BR)R R energy Junction and storage temperature T = T - 55 to + 175 C j stg range Rev. 1.8, 11-Sep-12 Document Number: 86048 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYW32, BYW33, BYW34, BYW35, BYW36 www.vishay.com Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 1 A V - 0.95 1.1 V F F V = V I -1 5 A R RRM R Reverse current V = V , T = 150 C I - 60 150 A R RRM j R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t - - 200 ns F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 120 2.5 V = V R RRM half sinewave 100 2.0 80 1.5 R = 45 K/W thJA I = 10 mm 60 ll 1.0 40 R = 100 K/W thJA 0.5 PCB: d = 25 mm 20 T = constant L 0 0 0 20 40 60 80 100 120 140 160 180 0 5 10 15 202530 16346 T - Ambient Temperature (C) 949552 l - Lead Length (mm) amb Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100 V = V R RRM 10 T = 175 C j 100 1 T = 25 C j 0.1 10 0.01 1 0.001 25 50 75 100 125 150 175 0 0.5 1.0 1.5 2.0 2.5 3.0 16347 T - Junction Temperature (C) 16345 V - Forward Voltage (V) j F Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature (C) Rev. 1.8, 11-Sep-12 Document Number: 86048 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 R - Ther. Resist. Junction/Ambient (K/W) I - Forward Current (A) thJA F I - Reverse Current (A) I - Average Forward Current (A) R FAV