Product Information

BAV70VGS08

Name: BAV70VGS08
Brand: Vishay
SKU: BAV70VGS08_Vishay
Availability: OutOfStock
Rating: 5 (11 reviews)

BAV70VGS08 electronic component of Vishay

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Diodes - General Purpose, Power, Switching RECOMMENDED ALT 78-BAV70-E3-08

Manufacturer: Vishay

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

295: USD 0.1463 ea
Line Total: USD 43.16

0 - Global Stock

MOQ: 295 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 10 May to Thu. 16 May MOQ : 295 Multiples : 1 BAV70VGS08 Vishay	295 : USD 0.1463 500 : USD 0.1447 1000 : USD 0.1085

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Additional Infomation About Product

BAV70-V www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES Silicon Epitaxial Planar Diode 3 Fast switching dual diode with common cathode This diode is also available in other configurations including: a dual with type designation BAV99-V, a dual common anode 12 with type designation BAW56-V, and a single diode with type designation BAL99-V 18108 AEC-Q101 qualified Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE TYPE MARKING INT. CONSTRUCTION REMARKS BAV70-V BAV70-GS18 or BAV70-V-GS08 JJ Dual common cathode Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Peak reverse voltage V 70 V RRM Reverse voltage V 70 V R Forward current (continuous) I 250 mA F t = 1 s I 2A p FSM Non repetitive peak forward current t = 1 ms I 1A p FSM t = 1 s I 0.5 A p FSM (1) Power dissipation P 350 mW tot Note (1) Device on fiberglass substrate, see layout THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 430 K/W thJA Junction temperature T 150 C j Storage temperature range T = T - 65 to + 150 C J stg Note (1) Device on fiberglass substrate, see layout Rev. 1.9, 30-Jan-13 Document Number: 85546 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000BAV70-V www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.715 V F F I = 10 mA V 0.855 V F F Forward voltage I = 50 mA V 1V F F I = 150 mA V 1.25 V F F V = 70 V I 2500 nA R R Reverse current V = 70 V, T = 150 C I 50 A R j R V = 25 V, T = 150 C I 30 A R j R Diode capacitance V = 0 V, f = 1 MHz C 1.5 pF R D I = 10 mA to i = 1 mA, F R Reverse recovery time t 6ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 100 T = 100 C j 10 25 C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 14356 V - Forward Voltage (V) F Fig. 1 - Forward Current vs. Forward Voltage 2 10 D = 0.005 0.01 0.02 0.05 1 10 0.1 0.2 / FM 0 10 -1 10 t p t p D = T -2 T 10 -6 -5 -4 -3 -2 -1 -0 10 10 10 10 10 10 10 s 22290 t Fig. 2 - Peak forward current/ = f (t ) FM p Rev. 1.9, 30-Jan-13 Document Number: 85546 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 I - Forward Current (mA) F

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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