BAT42WS, BAT43WS www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges For general purpose applications AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE INTERNAL PART ORDERING CODE TYPE MARKING REMARKS CONSTRUCTION BAT42WS-E3-08 or BAT42WS-E3-18 BAT42WS Single diode L2 BAT42WS-HE3-08 or BAT42WS-HE3-18 Tape and reel BAT43WS-E3-08 or BAT43WS-E3-18 BAT43WS Single diode L3 BAT43WS-HE3-08 or BAT43WS-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 30 V RRM (1) Forward continuous current I 200 mA F (1) Repetitive peak forward current t < 1 s, < 0.5 I 500 mA p FRM (1) Surge forward current t < 10 ms I 4A p FSM (1) Power dissipation P 150 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 650 K/W thJA Junction temperature T 125 C j Operating temperature range T -55 to +125 C op Storage temperature range T -55 to +150 C stg Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.5, 14-Oct-16 Document Number: 81813 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAT42WS, BAT43WS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 100 A (pulsed) V 30 V R (BR) V = 25 V I 0.5 A R R (1) Leakage current V = 25 V, T = 100 C I 100 A R j R I = 200 mA V 1000 mV F F I = 10 mA BAT42WS V 400 mV F F (1) Forward voltage I = 50 mA BAT42WS V 650 mV F F I = 2 mA BAT43WS V 260 330 mV F F I = 15 mA BAT43WS V 450 mV F F Diode capacitance V = 1 V, f = 1 MHz C 7pF R D I = 10 mA, I = 100 mA, F R Reverse recovery time t 5ns rr i = 1 mA, R = 100 R L Note (1) Pulse test t 300 s, t /T < 0.02 p p TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 250 1000 125 C 100 200 100 C 75 C 150 10 50 C 100 1 25 C 50 0.1 0 0.01 0 50 100 150 0 1020 3040 50 18444 20981 V - Reverse Voltage (V) T - Ambient Temperature (C) R amb Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature Fig. 3 - Typical Reverse Characteristics 1000 14 12 100 10 125 C - 40 C 10 8 25 C 6 1 4 0.1 2 0 0.01 015105202530 0 200 400 600 800 1000 1200 18445 V - Reverse Voltage (V) 18443 R V - Instantaneous Forward Voltage (mV) F Fig. 2 - Typical Forward Characteristics Fig. 4 - Typical Capacitance vs. Reverse Voltage Rev. 1.5, 14-Oct-16 Document Number: 81813 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I- Forward Current (mA) P - Admissible Power Dissipation (mW) F tot C - Diode Capacitance (pF) D I - Reverse Leackage Current (A) R