BAS33, BAS34 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes FEATURES Silicon planar diodes Very low reverse current AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE TYPE CIRCUIT PART TYPE DIFFERENTIATION ORDERING CODE REMARKS MARKING CONFIGURATION BAS33 V = 40 V BAS33-TAP or BAS33-TR BAS33 Single Tape and reel / ammopack RRM BAS34 V = 70 V BAS34-TAP or BAS34-TR BAS34 Single Tape and reel / ammopack RRM ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAS33 V 40 V RRM Repetitive peak reverse voltage BAS34 V 70 V RRM BAS33 V 30 V R Reverse voltage BAS34 V 60 V R Peak forward surge current t = 1 s I 2A p FSM Forward continuous current I 200 mA F THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, T = constant R 350 K/W L thJA Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Rev. 1.8, 12-Jul-17 Document Number: 85541 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAS33, BAS34 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA V 1V F F E 300 Ix, V I 13 nA R R E 300 Ix, V , T = 125 C I 0.5 A R j R Reverse current E 300 Ix, V = 15 V BAS33 I 0.5 1 nA R R E 300 Ix, V = 30 V BAS34 I 0.5 1 nA R R BAS33 V 40 V (BR) I = 5 A, t /T = 0.01, R p Breakdown voltage t = 0.3 ms p BAS34 V 70 V (BR) Diode capacitance V = 0 V, f = 1 MHz, C 3pF R D TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10 000 1000 V =V R RRM T =2 5 C j 1000 100 Scattering Limit Scattering Limit 100 10 10 1 1 0.1 0 0.4 0.8 1.2 1.6 04 08 0 120 160 200 2.0 94 9079 T - Junction Temperature (C) 94 9078 V - Forward Voltage (V) j F Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode Identicfi ation 26 min. 1.024 3.9 max. 0.154 26 min. 1.024 3.1 min. 0.120 Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.8, 12-Jul-17 Document Number: 85541 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I- Reverse Current (nA) R 0.6 max. 0.024 0.4 min. 0.015 I- Forward Current (mA) F 1.7 0.067 1.3 0.050