Product Information

BAS16-E3-08

BAS16-E3-08 electronic component of Vishay

Datasheet
Diodes - General Purpose, Power, Switching 75 Volt 0.15 Amp 2.0A IFSM @ 1uS

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

327: USD 0.0403 ea
Line Total: USD 13.18

6571 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 327  Multiples: 1
Pack Size: 1
Availability Price Quantity
6086 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

BAS16-E3-08
Vishay

1 : USD 0.0731
10 : USD 0.0724
25 : USD 0.0716
100 : USD 0.0362
250 : USD 0.0335
500 : USD 0.0235
1000 : USD 0.023
3000 : USD 0.023
6000 : USD 0.023

11640 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 15000
Multiples : 12000

Stock Image

BAS16-E3-08
Vishay

15000 : USD 0.0243

47554 - WHS 3


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

BAS16-E3-08
Vishay

1 : USD 0.23
10 : USD 0.1598
100 : USD 0.0713
1000 : USD 0.0495
2500 : USD 0.0333
15000 : USD 0.0299
45000 : USD 0.0253
90000 : USD 0.023

17460 - WHS 4


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 3000
Multiples : 3000

Stock Image

BAS16-E3-08
Vishay

3000 : USD 0.0263

6571 - WHS 5


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 327
Multiples : 1

Stock Image

BAS16-E3-08
Vishay

327 : USD 0.0403
500 : USD 0.0235
1000 : USD 0.023

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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BAS16 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode 3 Ultra fast switching speed Surface mount package ideally suited for automatic insertion High conductance 12 AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS click logo to get started please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAS16-E3-08 or BAS16-E3-18 BAS16 Single A6 Tape and reel BAS16-HE3-08 or BAS16-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Non repetitive peak reverse voltage V 100 V RM Repetitive peak reverse voltage = working peak reverse voltage V = V = V 75 V RRM RWM R = DC blocking voltage t = 1 s I 1A p FSM Peak forward surge current t = 1 s I 2A p FSM Half wave rectification with resistive load and Average forward current f 50 MHz, on ceramic substrate I 150 mA F(AV) 8 mm x 10 mm x 0.7 mm On ceramic substrate Forward current I 300 mA F 8 mm x 10 mm x 0.7 mm On ceramic substrate Power dissipation P 350 mW tot 8 mm x 10 mm x 0.7 mm THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On ceramic substrate Junction ambient R 357 K/W thJA 8 mm x 10 mm x 0.7 mm Junction and storage temperature range T = T -55 to +150 C j stg Operating temperature range T -55 to +150 C op Rev. 1.9, 11-Jul-17 Document Number: 85539 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAS16 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.715 V F F I = 10 mA V 855 mV F F Forward voltage I = 50 mA V 1V F F I = 150 mA V 1.25 V F F V = 75 V I 1000 nA R R Reverse current V = 75 V, T = 150 C I 50 A R j R V = 25 V, T = 150 C I 30 A R j R Diode capacitance V = 0, f = 1 MHz C 4pF R D I = 10 mA to i = 1 mA, F R Reverse recovery time t 6ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 10000 V =20V R 100 1000 T = 100 C j 10 25 C 100 1 10 0.1 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 150 175 200 14356 V Forward Voltage (V) - 14357 T Junction Temperature (C) F j Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Reverse Current vs. Junction Temperature Rev. 1.9, 11-Jul-17 Document Number: 85539 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F I Reverse Current (nA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
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