4N35, 4N36, 4N37 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES 1 6 Isolation test voltage 5000 V A B RMS Interfaces with common logic families C 2 5 C Input-output coupling capacitance < 0.5 pF Industry standard dual-in-line 6 pin package NC 3 4 E Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21842 APPLICATIONS i179004-5 AC mains detection Reed relay driving DESCRIPTION Switch mode power supply feedback Each optocoupler consists of gallium arsenide infrared LED Telephone ring detection and a silicon NPN phototransistor. Logic ground isolation Logic coupling with high frequency noise rejection AGENCY APPROVALS Underwriters laboratory file no. E52744 BSI: EN 60065:2002, EN 60950:2000 FIMKO EN 60065, EN 60335, EN 60950 certificate no. 25156 ORDER INFORMATION PART REMARKS 4N35 CTR > 100 %, DIP-6 4N36 CTR > 100 %, DIP-6 4N37 CTR > 100 %, DIP-6 (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 50 mA F Surge current t 10 s I 1A FSM Power dissipation P 70 mW diss OUTPUT Collector emitter breakdown voltage V 70 V CEO Emitter base breakdown voltage V 7V EBO I 50 mA C Collector current t 1 ms I 100 mA C Power dissipation P 70 mW diss COUPLER Isolation test voltage V 5000 V ISO RMS Creepage 7mm Clearance 7mm Isolation thickness between emitter 0.4 mm and detector Document Number: 81181 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 1.2, 07-Jan-10 153 4N35, 4N36, 4N37 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Comparative tracking index DIN IEC 112/VDE 0303, part 1 175 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature T - 55 to + 150 C stg Operating temperature T - 55 to + 100 C amb Junction temperature T 100 C j max.10 s dip soldering: (2) Soldering temperature distance to seating plane T 260 C sld 1.5 mm Notes (1) T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering condditions for through hole devices (DIP). (1) ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Junction capacitance V = 0 V, f = 1 MHz C 50 pF R j I = 10 mA V 1.3 1.5 V F F (2) Forward voltage I = 10 mA, T = - 55 C V 0.9 1.3 1.7 V F amb F (2) Reverse current V = 6 V I 0.1 10 A R R Capacitance V = 0 V, f = 1 MHz C 25 pF R O OUTPUT 4N35 BV 30 V CEO Collector emitter breakdown I = 1 mA 4N36 BV 30 V C CEO (2) voltage 4N37 BV 30 V CEO Emitter collector breakdown I = 100 A BV7V (2) E ECO voltage OUTPUT 4N35 BV 70 V CBO Collector base breakdown I = 100 A, I = 1 A 4N36 BV 70 V (2) C B CBO voltage 4N37 BV 70 V CBO 4N35 I 550 nA CEO V = 10 V, I = 0 CE F 4N36 I 550 nA CEO V = 10 V, I = 0 4N37 I 550 nA CE F CEO (2) Collector emitter leakage current 4N35 I 500 A CEO V = 30 V, I = 0, CE F 4N36 I 500 A CEO T = 100 C amb 4N37 I 500 A CEO Collector emitter capacitance V = 0 C 6pF CE CE COUPLER (2) 11 Resistance, input output V = 500 V R 10 IO IO Capacitance, input output f = 1 MHz C 0.6 pF IO Notes (1) T = 25 C, unless otherwise specified. amb Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (2) Indicates JEDEC registered value. www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 81181 154 Rev. 1.2, 07-Jan-10