Product Information

4N25/LT

4N25/LT electronic component of Vishay

Datasheet
4N25/LT OPTOCOUPLER ISOLATOR DIP

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.974 ea
Line Total: USD 0.97

577 - Global Stock
Ships to you by
Mon. 29 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
577 - Global Stock


Ships to you by Mon. 29 Apr

MOQ : 1
Multiples : 1

Stock Image

4N25/LT
Vishay

1 : USD 0.974
10 : USD 0.487
50 : USD 0.4383
250 : USD 0.3653
500 : USD 0.3287

     
Manufacturer
Product Category
Current Transfer Ratio
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
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4N25, 4N26, 4N27, 4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES Isolation test voltage 5000 V RMS 1 6 A B Interfaces with common logic families C 2 5 C Input-output coupling capacitance < 0.5 pF Industry standard dual-in-line 6 pin package NC 3 4 E Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21842 APPLICATIONS i179004-5 AC mains detection Reed relay driving DESCRIPTION Switch mode power supply feedback The 4N25 family is an industry standard single channel Telephone ring detection phototransistor coupler. This family includes the 4N25, Logic ground isolation 4N26, 4N27, 4N28. Each optocoupler consists of gallium Logic coupling with high frequency noise rejection arsenide infrared LED and a silicon NPN phototransistor. AGENCY APPROVALS UL1577, file no. E52744 BSI: EN 60065:2002, EN 60950:2000 FIMKO: EN 60950, EN 60065, EN 60335 ORDER INFORMATION PART REMARKS 4N25 CTR > 20 %, DIP-6 4N26 CTR > 20 %, DIP-6 4N27 CTR > 10 %, DIP-6 4N28 CTR > 10 %, DIP-6 (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 5V R Forward current I 60 mA F Surge current t 10 s I 3A FSM Power dissipation P 100 mW diss OUTPUT Collector emitter breakdown voltage V 70 V CEO Emitter base breakdown voltage V 7V EBO I 50 mA C Collector current t 1 ms I 100 mA C Power dissipation P 150 mW diss www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 83725 132 Rev. 1.8, 07-Jan-10 4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Isolation test voltage V 5000 V ISO RMS Creepage distance 7mm Clearance distance 7mm Isolation thickness between emitter and 0.4 mm detector Comparative tracking index DIN IEC 112/VDE 0303, part 1 175 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature T - 55 to + 125 C stg Operating temperature T - 55 to + 100 C amb Junction temperature T 125 C j max.10 s dip soldering: (2) Soldering temperature distance to seating plane T 260 C sld 1.5 mm Notes (1) T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP). (1) ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT (2) Forward voltage I = 50 mA V 1.3 1.5 V F F (2) Reverse current V = 3 V I 0.1 100 A R R Capacitance V = 0 V C 25 pF R O OUTPUT (2) Collector base breakdown voltage I = 100 A BV 70 V C CBO (2) Collector emitter breakdown voltage I = 1 mA BV 30 V C CEO (2) Emitter collector breakdown voltage I = 100 A BV7V E ECO 4N25 5 50 nA 4N26 5 50 nA (2) I (dark) V = 10 V, (base open) CEO CE 4N27 5 50 nA 4N28 10 100 nA V = 10 V, CB (2) I (dark) 220 nA CBO (emitter open) Collector emitter capacitance V = 0 C 6pF CE CE COUPLER (2) Isolation test voltage Peak, 60 Hz V 5000 V IO Saturation voltage, collector emitter I = 2 mA, I = 50 mA V 0.5 V CE F CE(sat) (2) Resistance, input output V = 500 V R 100 G IO IO Capacitance, input output f = 1 MHz C 0.6 pF IO Notes (1) T = 25 C, unless otherwise specified. amb Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively. Document Number: 83725 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 1.8, 07-Jan-10 133

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