Product Information

1N5060TR

1N5060TR electronic component of Vishay

Datasheet
Rectifiers 2.0 Amp 400 Volt 50 Amp IFSM

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5635 ea
Line Total: USD 0.56

15226 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19481 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

1N5060TR
Vishay

1 : USD 0.4246
10 : USD 0.4203
25 : USD 0.332
100 : USD 0.2255
250 : USD 0.2242
500 : USD 0.2222
1000 : USD 0.2201
3000 : USD 0.2157
6000 : USD 0.2157
15000 : USD 0.2157

15226 - WHS 2


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

1N5060TR
Vishay

1 : USD 0.5635
10 : USD 0.4784
100 : USD 0.3358
500 : USD 0.2737
1000 : USD 0.2105
2500 : USD 0.1978
10000 : USD 0.1978
25000 : USD 0.1943
50000 : USD 0.1897

19481 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 35
Multiples : 1

Stock Image

1N5060TR
Vishay

35 : USD 0.3425
100 : USD 0.2327
250 : USD 0.2314
500 : USD 0.2293
1000 : USD 0.227
3000 : USD 0.2225

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
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1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed axial-leaded glass envelope Controlled avalanche characteristics Low reverse current High surge current loading Material categorization: 949539 For definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA APPLICATIONS Case: SOD-57 Rectification diode, general purpose Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY 1N5062 1N5062TR 5000 per 10 tape and reel 25 000 1N5062 1N5062TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE 1N5059 V = 200 V I = 2 A SOD-57 R F(AV) 1N5060 V = 400 V I = 2 A SOD-57 R F(AV) 1N5061 V = 600 V I = 2 A SOD-57 R F(AV) 1N5062 V = 800 V I = 2 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT 1N5059 V = V 200 V R RRM 1N5060 V = V 400 V Reverse voltage = repetitive peak reverse R RRM See electrical characteristics voltage 1N5061 V = V 600 V R RRM 1N5062 V = V 800 V R RRM Peak forward surge current t = 10 ms, half sine wave I 50 A p FSM T = 45 K/W, T = 50 C I 2A thJA amb F(AV) Average forward current T = 100 K/W, T = 75 C I 0.8 A thJA amb F(AV) Pulse energy in avalanche mode, non I = 1 A, inductive load E 20 mJ (BR)R R repetitive (inductive load switch off) Junction and storage temperature range T = T - 55 to + 175 C j stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA Rev. 1.7, 12-Sep-12 Document Number: 86000 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 910001N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX UNIT I = 1 A V -- 1 V F F Forward voltage I = 2.5 A V - - 1.15 V F F V = V I -- 1 A R RRM R Reverse current V = V , T = 100 C I - - 10 A R RRM j R V = V , T = 150 C I - - 100 A R RRM j R 1N5059 V 225 - 1600 V (BR)R 1N5060 V 450 - 1600 V (BR)R Breakdown voltage I = 100 A R 1N5061 V 650 - 1600 V (BR)R 1N5062 V 900 - 1600 V (BR)R Diode capacitance V = 0 V, f = 1 MHz C -40 - pF R D Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t -- 4 s F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 200 3.0 V =V R RRM V =V R RRM half sinewave 2.5 R = 160 thJA 1N5062 45 K/W R =4 5 K/W thJA 2.0 l =10 mm 120 100 K/W 1N5061 1.5 160 K/W 80 1N5060 1.0 1N5059 40 R = 100 K/W thJA 0.5 PCB :d=2 5m m 0 0.0 02 04 06 08 0 100 120 140 160 180 25 50 75 100 125 150 175 T - Ambient T emperature (C) amb 15764 T - Junction Temperature (C) j 15763 1 Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100 V =V R RRM T =175C j 10 100 T =25C j 1 10 0.1 1 0.01 0.1 0.001 25 50 75 100 125 150 175 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 T - Junction Temperature (C) 15765 j 15762 V - Forward Voltage(V) F Fig. 2 - Max. Reverse Current vs. Junction Temperature Fig. 4 - Max. Forward Current vs. Forward Voltage Rev. 1.7, 12-Sep-12 Document Number: 86000 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current ( A) P - Reverse Power Dissipation ( mW ) R R I - Forward Current ( A ) I- Average Forward Current (A) F FA V

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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