US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1
US-Lasers: 808nm-5mW - Infrared Laser Diodes and Infrared Diode
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TECHNICAL DATA for LASER MODULE
Barrel Specs: Collect Specs: Lens Housing Specs:
z 3/8 - 56 Thread Size z 3/8 - 56 Thread Size z 3/8 - 56 Thread Size
z Dia: 10.4mm z 4.3mm Aperature z 3.7mm Aperture
z Length: 17mm z Half Hard Brassbbb z 7mm Plastic Lens
INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - (Tc=25 C)
TECHNICAL DATA for LASER DIODE
z Index Guided MQW Structure
z Wavelength: 808nm (Typ.)
z Optical Power: 5mW CW
z Threshold Current: 25mA (Typ.)
z Standard Package: 5.6mm
Infrared light output 808nm
Pin Out Diagram - Style A
Optical power output 5mW CW
Package Type 5.6mm
Built-in photo diode for monitoring laser output
Items Symbols Values Unit
Optical output power Po 5 mW
Laser diode reverse voltage VLDR 2 V
Photo diode reverse voltage VPDR 30 V
Operating temperature Topr -10 ~ +40 C
Storage temperature Tstg -40 ~ +85 C
OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 C)
Symbols Min. Typ. Max. Unit Test Condition
Items
Optical output power Po - 5 - mW -
Threshold current Ith 10 20 35 mA -
Operating current Iop 15 25 45 mA Po=5mW
Operating voltage Vop 1.9 2.1 2.5 V Po=5mW
Lasing wavelength 8 D 800 808 820 nm Po=5mW
Beam divergence F 8 11 15 deg Po=5mW
Beam divergence z 20 35 45 deg Po=5mW
Slope Efficiency (mW/mA) 0 0.1 0.3 0.6 -
Monitor current Im 10 100 200 Po=5mW,Vr=5V
A
Astigmatism As - 11 - Po=5mW
m
3000-5,000
MTTF Po=5mW,NA=0.4
hrs.
Emitter Size 1 x 4 Microns
Emitter Distance to Cap Lens 0.3mm
Structure Index Guided
X-ON Electronics
Largest Supplier of Electrical and Electronic Components
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