Product Information

CHA2441-QAG

CHA2441-QAG electronic component of United Monolithic Semiconductors

Datasheet
CHA2441QAG united monolithic amplifier rf integrated circuits ics semiconductors

Manufacturer: United Monolithic Semiconductors
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 24.2 ea
Line Total: USD 96.8

1047 - Global Stock
Ships to you between
Wed. 15 May to Tue. 21 May
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
199 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 3
Multiples : 1

Stock Image

CHA2441-QAG
United Monolithic Semiconductors

3 : USD 31.25

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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CHA2441-QAG 22-26GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2441-QAG is a K-band low noise amplifier providing 25.5dB gain from a single UMS UMSUMSUMSUMSUMSUMS bias supply +3.3V with a noise figure of A2441 2.5dB. All the active devices are self biased A3667AA3688AA3667AA3667AA3688AA3667A on chip. YYWW YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG The circuit is manufactured with a pHEMT process 0.25m. It is supplied in RoHS compliant SMD package. Main Features 22-26GHz Bandwith -40C excellent 2.5dB Noise Figure +25C 25.5dB Gain DC bias: Vd=3.3Volt@Id=50mA +105C 16L-QFN3x3 MSL1 S21 versus frequency and temperature Main Electrical Characteristics Tamb.= +25C; Vd=+3.3V Symbol Parameter Min Typ Max Unit Freq Frequency range 22 26 GHz Gain Linear Gain 25.5 dB NF Noise Figure 2.5 dB Pin Input Power @1dB comp. -14 dBm -1dB Ref. : DSCHA2441-QAG3149 - 29 May 13 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bt. Charmille - Parc SILIC - 10, Avenue du Qubec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2441-QAG 22-26GHz Low Noise Amplifier Electrical Characteristics Full operating temperature range; Vd=+3.3V Symbol Parameter Min Typ Max Unit Frequency Range 22 26 GHz Freq Small signal gain 25.5 dB Gain Small signal gain variation over temperature +2/- 2.5 dB G(T) SSB Noise Figure 2.5 dB NF Input/Output Return Loss 12 dB S11/S22 Input power at 1 dB gain compression -14 dBm Pin -1dB Input IP3 -4 dBm IIP3 Saturated output power @ 24.5 GHz 15 dBm Psat Supply Current 50 mA Id Operating temperature range -40 25 105 C Top These values are representative of onboard measurements as defined on the drawing in paragraphEvaluation mother boar. (1) Absolute Maximum Ratings Symbol Parameter Values Unit +Vd Maximum positive supply voltage 4.0 V +I Maximum positive supply current 70 mA RFin Maximum peak input power overdrive -5.0 dBm Top Operating temperature range -40 to 105 C Tstg Storage temperature range -55 to 150 C Tjmax Maximum Junction Temperature 175 C (1) Operation of this device above anyone of these parameters may cause permanent damage. Ref. : DSCHA2441-QAG3149 - 29 May 13 2/10 Specifications subject to change without notice Bt. Charmille - Parc SILIC - 10, Avenue du Qubec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

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