Product Information

OPB732W

OPB732W electronic component of TT ELECTRONICS

Datasheet
Optical Switches, Reflective, Phototransistor Output Reflective Sensor

Manufacturer: TT ELECTRONICS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.1531 ea
Line Total: USD 7.15

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

OPB732W
TT ELECTRONICS

1 : USD 7.2781
5 : USD 6.8538
10 : USD 6.6904
50 : USD 6.5356
100 : USD 6.1189
250 : USD 5.9535

     
Manufacturer
Product Category
Sensing Distance
Forward Voltage
Brand
Sensor Output
Sensor Mounting
Forward Current If
Reverse Voltage Vr
Collector Emitter Voltage Vbrceo
Svhc
Input Current
No. Of Channels
No. Of Pins
Operating Temperature Max
Operating Temperature Min
Operating Temperature Range
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Long Distance Reflective Switch OPB732, OPB732WZ OPB732 Features: PC board mounting (OPB732) 24 (610 mm) 26 AWG wired with mounting tabs (OPB732WZ) Product Photo Here Non-contact infrared switch OPB732WZ Up to 1 or more reflective distance depending on circuitry Description: OPB732 uses an Infrared LED and Phototransistor in a reflective switch configuration. The assembly is offered with either PCBoard through hole pins (OPB732) or 24 (610 mm), 26 AWG wires (OPB732WZ), and uses an opaque housing to reduce the sensors ambient light sensitivity. The emitter and sensor are protected by a clear window, providing a device that can operate in a dusty environment. The phototransistor can be configured as a Common Collector or Common Emitter device. While an object is in the reflective path of the device, light from the LED will be reflected back to the housing irradiating the surface (base) of the phototransistor. When Infrared light strikes the phototransistor, the transistor becomes forward biased and is considered to be in the ON state, providing an I current proportional to the C(ON) light striking the phototransistor. With the Infrared light from the LED not being reflected to the phototransistor, the phototransistor turns OFF, minimizing the I current. C(ON) Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Applications: Ordering Information Non-contact reflective object sensor Door sensor Part LED Peak Lead Length / Spacing Assembly line automation Machine safety Number Wavelength Machine automation End of travel sensor 0.150/ see diagram OPB732 850 nm Equipment security Door sensor OPB732WZ 24 / 26 AWG Wire 3 2 Pin LED Green-1 Emitter White-2 Collector Red-3 Anode Black-4 Cathode 4 1 OPB732 OPB732WZ OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A .2 02/06 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 3 Long Distance Reflective Switch OPB732, OPB732WZ o Absolute Maximum Ratings (T = 25 C unless otherwise noted) A Storage Temperature -40 C to +100 C Operating Temperature -40 C to +85 C (2) Lead Soldering Temperature (1/16 (1.6mm) from case for 5 seconds with soldering iron) 260 C LED Forward Current 50 mA Peak Forward current (2 s pulse width, 0.1% Duty Cycle) 1 A Reverse DC Voltage 3 V Power Dissipation 100 mW Output Photo Transistor Collector-Emitter Voltage 30 V Collector DC Current 50 mA Power Dissipation 100 mW Electrical Characteristics (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS Input LED (See OP240 for additional information, reference only) V Forward Voltage - - 1.8 V I = 20 mA F F I Reverse Current - - 100 A V = 2 V R R Output Phototransistor (See OP550 for additional information, reference only) 2 V Collector-Emitter Breakdown Voltage 30 - - V I = 100 A, E = 0 mw/cm (BR)CEO C E 2 I Collector-Emitter Dark Current - - 100 nA V = 10 V, E = 0 mw/cm CEO CE E Coupled (4) V Collector-Emitter Saturation Voltage - - 0.4 V I = 250 A, I = 30 mA , (4) CE(SAT) C F (4) I On-State Collector Current 0.25 - - mA V = 1 V, I = 30 mA, (4) C(ON) CE F V = 5 V, I = 30 mA, CE F I Cross Talk - - 50 A CX No reflective surface Notes: (1) All parameters tested using pulse technique. (2) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (3) Methanol or isopropanol are recommended as cleaning agents. The plastic housing is soluble in chlorinated hydrocarbons and keytones. (4) Distance = 1 (from front of package to a 90% diffuse reflective white card) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.2 02/06 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 3 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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