Product Information

OPB660N

OPB660N electronic component of TT Electronics

Datasheet
Optical Switches, Transmissive, Photo IC Output Photo transistor Slotted Opt Switch
Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.829 ea
Line Total: USD 2.83

259 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
259 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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OPB660N
TT Electronics

1 : USD 2.829
100 : USD 2.7025
300 : USD 2.599
1000 : USD 2.5415

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Slot Width
Forward Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Collector- Emitter Voltage Vceo Max
Sensing Method
Wavelength
Brand
Power Dissipation
Maximum Collector Current
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

Slotted Optical Switch OPB660N, OPB660T Features: Non-contact switching Printed circuit board mounting Enhanced signal to noise ratio Gap 0.125 (3.18mm) wide and 0.345 (8.76mm) deep slot Emitter Aperture 0.05 X 0.06 (1.27mm X 1.52mm), Sensor Aperture 0.01 X 0.06 (0.25mm X 1.52mm) Description: Each OPB660 slotted optical switch consists of an infrared emitting diode and a NPN silicon phototransistor, combined with an enhanced low current roll-o tff hat improves contrast ratio and provides immunity to background irradiance. Housings are made from an opaque grade of injection -molded plastic to minimize sensitivity to both visible and near -infrared light. Applications: Non-contact transmissive object sensor Assembly line automation Machine automation Machine safety Part LED Peak Slot Width / Aperture Lead Length / Number Wavelength Sensor Depth Emitter/Sensor Spacing End of travel sensor Door sensor OPB660N Rbe 0.100 / 0.320 890 nm 0.125 / 0.345 0.05 / 0.01 (MIN) Transistor OPB660T 2 3 1 4 Pin LED Pin Transistor 1 A node 3 Coll ec t or 2 Cat hode 4 Em it t er MILLIMETERS DIMENSIONS ARE IN: INCHES General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue A 11/2016 Page 1 TT electronics plc Slotted Optical Switch OPB660N, OPB660T Electrical Specifications Absolute Maximum Ratings (T =25C unless otherwise noted) A Storage & Operating Temperature Range -40 C to +100 C (1) Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260C Input Diode Forward DC Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 1 A Reverse DC Voltage 3 V (2) Power Dissipation 100 mW Output Phototransistor Collector-Emitter Voltage 24 V Collector DC Current 30 mA (3) Power Dissipation 200 mW Electrical Characteriscti s (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode V Forward Voltage - - 1.6 V I = 10 mA F F I Reverse Current - - 100 A V = 3 V R R Output Phototransistor V Collector-Emitter Breakdown Voltage 24 - - V I = 100 A (BR)CEO CE BV Emitter Reverse Breakdown Voltage 0.4 - - V I = 100 A ECO EC I Collector-Emitter Dark Current - - 100 A V = 5 V CEO CE Combined V Collector-Emitter Saturation Voltage - - 0.4 V I = 10 mA, I = 100 A, (gap unblocked) SAT F C I On-State Collector Current 600 - - A I = 10 mA, V = 5 V C(ON) F CE Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when ofl w soldering. A maximum of 20 grams force ma y be ap- plied to leads when soldering. (2) Derate linearly 1.33 mW/ C above 25 C. (3) Derate linearly 2.0 mW/ C above 25 C. General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue A 11/2016 Page 2 TT electronics plc

HS Compliance

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

TT Electronics may also be referenced as

AB Connectors
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BCK
BI Magnetics
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BI Technologies/TT Electronics
International Resistive
INTERNATIONAL RESISTIVE COMPANY
IRC
IRC TT Electronics
IRC (TT electronics)
IRC / TT Electronics
IRC/TT Electronics
OPT
Optek TT Electronics
Optek / TT Electronics
OPTEK TECHNOLOGY
Optek Technology (TT electronics)
Optek Technology/TT Electronics
Optek/TT Electronics
Power Partners
Power Partners / TT Electronics
SEMELAB
Semelab TT Electronics
Semelab (TT electronics)
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Stadium Group
TT Electronics - IoT Solutions
TT ELECTRONICS / AB CONNECTORS
TT ELECTRONICS / BI TECHNOLOGIES
TT ELECTRONICS / INTERNATIONAL RESISTIVE
TT ELECTRONICS / OPTEK TECHNOLOGY
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TT Electronics Integrated Manufacturing
TT Electronics/BI
TT Electronics/BI Magnetics
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TT Electronics/Optek Technology
TT Electronics/Welwyn
TT ElectronicsBI
TT ElectronicsIRC
TT ElectronicsOptek Technology
TT ElectronicsWelwyn
TT4
WEL
WELWYN
Welwyn (TT electronics)
WELWYN COMPONENTS
Welwyn Components TT Electronics
Welwyn Components / TT Electronics

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