Product Information

OP224TXV

OP224TXV electronic component of TT Electronics

Datasheet
Optek TT Electronics Infrared Emitters 890NM 100mW 100mA

Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 30.8579 ea
Line Total: USD 3085.79

0 - Global Stock
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 100
Multiples : 100

Stock Image

OP224TXV
TT Electronics

100 : USD 38.22

0 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 100
Multiples : 100

Stock Image

OP224TXV
TT Electronics

100 : USD 33.7755

     
Manufacturer
Product Category
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Packaging
Hts Code
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Hi-Reliability GaAIAs Infrared Emitting Diode OP223, OP224 (TX, TXV), OP224 (S) Features: Processed to OPTEKs military screening program, patterned after MIL -PRF-19500 Miniature hermetically sealed pill package Twice the power output of GaAs at same drive current S level screening available Mechanically and spectrally matched to OP600 phototransistors Description: Each OP223 (TX) and OP224 (S, TX, TXV) device is an 890 nm high reliability gallium aluminum arsenide infrared emitting diode that is mounted in a miniature hermetically sealed pill type package which can be directly mounted to PCBoards. The gallium aluminum arsenide feature provides twice the radiated output of gallium arsenide at the same forward current. After electrical testing by manufacturing, devices are processed to OPTEK s 100 percent screening program, which is patterned after MIL -PRF-19500. With a wavelength centered at 890 nm, the OP223 (TXV) and OP224 (S, TX, TXV). TX and TXV devices are processed to OPTEK s military screening program patterned after MIL -PRF-19500. S devices are processed to OPTEK s military screening program patterned aeft r MIL-STD-883. Please refer to Applicaon ti Bulletins 208 and 210 for additional design information and reliability (degradation) data. Contact your local representative or OPTEK for more information. Applications: Part LED Peak Output Power Total Beam Lead Non-contact reefl cvti e object sensor Number Wavelength Minimum Angle Length Assembly line automation 2 Machine automation OP223TX 1.00 mW/cm Machine safety OP224S 890 nm 24 N/A End of travel sensor 2 1.50 mW/cm OP224TX Door sensor OP224TXV 1 2 Pin LED Sensor 1 Anode Collector 2 Cathode Emitter MILLIMETERS DIMENSIONS ARE IN: INCHES General Note TT Electronics OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is sensors ttelectronics.com www.ttelectronics.com Pin LED Sensor considered accurate at time of going to print. Issue C 09/2019 Page 1 TT electronics plc 1 Anode Collector 2 Cathode Emitter Hi-Reliability GaAIAs Infrared Emitting Diode OP223, OP224 (TX, TXV), OP224 (S) Electrical Specifications Absolute Maximum Ratings (T = 25 C unless otherwise noted) A o o Storage Temperature Range -65 C to +150 C o o Operating Temperature Range -55 C to +125 C (1) Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260 C Reverse Voltage 2.0 V Continuous Forward Current 100 mA (2) Power Dissipation 100 mW Notes: 1. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when ofl w soldering. 2. Derate linearly 1.00 mW/ C above 25 C. Electrical Characteriscti s (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode Radiant Power Output E OP223 (TX) 1.00 - - mW I = 50 mA E (APT) F OP224 (S, TX, TXV) 1.50 - - I = 50 mA F V Forward Voltage 0.80 - 1.80 V I = 50 mA F F I Reverse Current - - 100 A V = 2.0 V R R Wavelength at Peak Emission - 890 - nm I = 50 mA P F Spectral Bandwidth between Half Power B - 80 - nm I = 50 mA F Points /T Spectral Shift with Temperature - 0.18 - nm/C I = Constant P F Emission Angle at Half Power Points - 18 - Degree I = 50 mA HP F General Note TT Electronics OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is sensors ttelectronics.com www.ttelectronics.com considered accurate at time of going to print. Issue C 09/2019 Page 2 TT electronics plc

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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WEL
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