Product Information

OP123

OP123 electronic component of TT Electronics

Datasheet
Optek TT Electronics Infrared Emitters Infrared 935nm

Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.048 ea
Line Total: USD 4.05

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 25
Multiples : 25

Stock Image

OP123
TT Electronics

25 : USD 3.6768
100 : USD 3.5406
250 : USD 3.4044
625 : USD 3.4044
1000 : USD 3.4044

0 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

OP123
TT Electronics

1 : USD 3.6685
100 : USD 3.4385
250 : USD 3.3695
400 : USD 3.2315
1200 : USD 3.1165
2000 : USD 3.105

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Packaging
Illumination Color
Brand
Factory Pack Quantity :
Lens Shape
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
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Image Description
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Hermetic Infrared Emitting Diode OP123, OP124 OP223, OP224 Features: Hermetically sealed package Mechanically and spectrally matched to other OPTEK devices Designed for direct mount to PCBoard Description: Each OP123 and OP124 device is a 935 nanometer (nm) high intensity gallium arsenide infrared emitting diode (GaAs), mounted in a miniature hermetically sealed pill package with an enhanced temperature range and a high power output. These devices are designed for direct mounting to PCBoards. Each OP223 and OP224 device is an 890 nm gallium aluminum arsenide infrared emitting diode (GaAIAs), mounted in a hermetically sealed pill package with an enhanced temperature range and a narrow irradiance pattern that provides high on-axis intensity for excellent coupling efficiency. These devices offer significantly higher power output than GaAs at equivalent drive currents and have a wavelength that is matched to silicons peak response. Their small package size permits high device density mounting. All these LEDs are mechanically and spectrally matched to the OP300 series, OP600 series and OP640 series devices. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data, and to Application Bulletin 202 for pill-type soldering to PCBoard. Applications: Ordering Information Part LED Peak Total Beam Non-contact reflective object sensor Number Wavelength Angle Assembly line automation OP123 935 mm Machine automation OP124 24 Machine safety OP223 890 mm End of travel sensor OP224 Door sensor 1 2 Pin LED Sensor 1 Anode Collector 2 Cathode Emitter MILLIMETERS DIMENSIONS ARE IN: INCHES OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A 05/07 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 4 Hermetic Infrared Emitting Diode OP123, OP124 OP223, OP224 Absolute Maximum Ratings (T =25C unless otherwise noted) A o o Storage Temperature Range -65 C to +150 C o o Operating Temperature Range -65 C to +125 C Reverse Voltage 2.0 V Continuous Forward Current 100 mA Peak Forward Current (2s pulse with 0.1% duty cycle) 1.0 A (1)(2) Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260 C (3) Power Dissipation 150 mW Electrical Characteristics (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode Apertured Radiant Incidence OP123 0.40 - - (3) 2 (4) E OP124 1.00 - - mW/cm I = 50 mA E (APT) F OP223 1.00 - - OP224 3.50 - - Forward Voltage V OP123 - - 1.50 F V I = 50 mA F OP124 - - 1.80 I Reverse Current - - 100 A V = 2.0 V R R Wavelength at Peak Emission OP123, OP124 - 935 - I = 50 mA P F nm OP223, OP224 - 890 - I = 10 mA F Spectral Bandwidth between Half Power B Points OP123, OP124 - 50 - I = 50 mA F nm OP223, OP224 - 80 - I = 10 mA F Spectral Shift with Temperature / T OP123, OP124 - +0.30 - P nm/C I = Constant F OP223, OP224 - +0.18 - Emission Angle at Half Power Points 24 Degree I = 50 mA HP F - - Output Rise Time t OP123, OP124 - 1000 - r ns OP223, OP224 - 500 - I =100 mA, PW=10 s, and F(PK) D.C.=10.0% Output Fall Time t OP123, OP124 - 500 - f ns OP223, OP224 - 250 - Notes: 1. Refer to Application Bulletin 202 which reviews proper soldering techniques for pill-type devices. 2. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 3. Derate linearly 1.50 mW/ C above 25 C. 4. For OP123, OP124, OP223 and OP224, E is a measurement using a 0.031 (0.787 mm) diameter apertured sensor placed E(APT) 0.50 (12.7 mm) from the measuring surface. E is not necessarily uniform within the measured area. E(APT) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A 05/07 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 4 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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