TTA1713 Bipolar Transistors Silicon PNP Epitaxial Type TTA1713TTA1713TTA1713TTA1713 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Low-Frequency Power Amplifiers 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Base 2: Emitter 3: Collector S-Mini 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Collector-base voltage V -50 V CBO Collector-emitter voltage V -45 V CEO Emitter-base voltage V -5 V EBO Collector current I -500 mA C Base current I -50 mA B Collector power dissipation (Note 1) P 200 mW C Junction temperature T 150 j Storage temperature T - 55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 0.42 mm2 3) Start of commercial production 2017-06 2017-2018 2018-05-28 1 Toshiba Electronic Devices & Storage Corporation Rev.1.0TTA1713 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Test Condition Min Typ. Max Unit Collector cut-off current I V = -50 V , I = 0 mA -100 nA CBO CB E Emitter cut-off current I V = -5 V, I = 0 mA -100 nA EBO EB C DC current gain h (1) (Note 1) V = -1 V, I = -100 mA 120 390 FE CE C h (2) V = -1 V, I = -500 mA 40 FE CE C Collector-emitter saturation V I = -500 mA, I = -50 mA -0.4 V CE(sat) C B voltage Base-emitter voltage V V = -1 V, I = -100 mA -1.0 V BE CE C Transition frequency f V = -5 V, I = -10 mA, 80 MHz T CE C f = 100 MHz Collector output capacitance C V = -10 V , I = 0 mA, 4 pF ob CB E f = 1 MHz Note 1: h classification: Y rank 120 to 270, GR rank 180 to 390 FE 5. 5. MarkingMarking 5. 5. MarkingMarking hhhhFEFEFEFE rank: Y rank: Y rank: Y rank: Y hhhhFEFEFEFE rank: GR rank: GR rank: GR rank: GR 2017-2018 2018-05-28 2 Toshiba Electronic Devices & Storage Corporation Rev.1.0