Product Information

TLP701(TP,F)

TLP701(TP,F) electronic component of Toshiba

Datasheet
Logic Output Opto-couplers IC Cplr IGBT drive IFLH=5mA

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9708 ea
Line Total: USD 0.97

5477 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
933 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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TLP701(TP,F)
Toshiba

1 : USD 0.8593
10 : USD 0.827
100 : USD 0.8143
250 : USD 0.7476
500 : USD 0.7357
1000 : USD 0.7208
1500 : USD 0.7208
3000 : USD 0.7208

5477 - WHS 2


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

TLP701(TP,F)
Toshiba

1 : USD 0.9708
10 : USD 0.7931
30 : USD 0.7024
100 : USD 0.6137
500 : USD 0.5624
1500 : USD 0.5347

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rise Time
Fall Time
Output Type
Package / Case
Number of Channels
Isolation Voltage
Maximum Continuous Output Current
If - Forward Current
Vf - Forward Voltage
Vr - Reverse Voltage
Propagation Delay - Max
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Type
Width
Brand
Cnhts
Hts Code
Mxhts
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Taric
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TLP701 TOSHIBA Photocoupler IRED + Photo IC TLP701 Industrial inverters Unit: mm Inverter for air conditioners 4.580.25 IGBT/Power MOS FET gate drive 6 5 4 TLP701 consists of an infrared LED and an integrated photodetector. This unit is 6-lead SDIP package. The TLP701 is 50% smaller than the 8-pin DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The TLP701 is suitable for gate driving circuits for IGBTs or power MOSFETs. 1 2 3 In particular, the TLP701 is capable of direct gate driving of low-power IGBTs. 7.620.25 Peak output current : 0.6 A (max) Guaranteed performance over temperature : 40 to 100C Supply current : 2 mA (max) 1.270.2 1.250.25 Power supply voltage : 10 to 30 V 0.40.1 9.70.3 Threshold input current : I = 5 mA (max) FLH Switching time (tp / tp ) : 700 ns (max) LH HL Common mode transient immunity : 10 kV/ s (min) TOSHIBA 11-5J1S Isolation voltage : 5000 Vrms (min) Weight: 0.26 g (typ.) Construction mechanical rating 7.62-mm pitch 10.16-mm pitch Pin Configuration (Top View) standard type TLPXXXF type Creepage Distance 7.0 mm (min) 8.0 mm (min) 1: ANODE Clearance 7.0 mm (min) 8.0 mm (min) 1 6 2: NC Insulation Thickness 0.4 mm (min) 0.4 mm (min) 3: CATHODE 2 5 4: GND UL-recognized: UL 1577, File No.E67349 5: OUTPUT 6: V cUL-recognized: CSA Component Acceptance Service No.5A 3 4 CC SHIELD File No.E67349 VDE-approved: EN 60747-5-5 , EN 62368-1 (Note 1) Note 1 : When a VDE approved type is needed, Schematic I CC 6 please designate the Option(D4). V CC (Tr1) Truth Table I F 1+ Input LED Tr1 Tr2 Output V I F O 5 (Tr2) 3 V O H ON ON OFF H OFF OFF ON L L 4 GND SHIELD A 0.1-F bypass capacitor must be connected between pins 6 and 4. Start of commercial production 2004-04 2019 1 2019-09-25 Toshiba Electronic Devices & Storage Corporation +0.15 3.65 6.80.25 0.25 +0.10 0.25 0.05 +0.25 4.0 0.20 TLP701 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Forward current I 20 mA F Forward current derating (Ta 85C) I /Ta 0.54 mA/C F Pulse transient forward current (Note 1) I 1 A FP Reverse voltage V 5 V R Input power dissipation PD 40 mW Input power dissipation derating (Ta 85C) P /Ta -1.0 mW/C D Junction temperature Tj 125 C H peak output current (Note 2) I 0.6 A OPH L peak output current (Note 2) I 0.6 A OPL Output voltage V 35 V O Supply voltage V 35 V CC Output power dissipation PO 400 mW Output power dissipation derating (Ta 85C) P /Ta -1.0 mW/C O Junction temperature Tj 125 C Operating frequency (Note 3) f 25 kHz Operating temperature range T 40 to 100 C opr Storage temperature range T 55 to 125 C stg Lead soldering temperature (10 s) (Note 4) Tsol 260 C Isolation voltage (AC, 60 s, R.H. 60 %) (Note 5) BV 5000 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: A ceramic capacitor (0.1 F) should be connected from pin 6 to pin 4 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm. Note 1: Pulse width P 1 s, 300 pps W Note 2: Exponential waveform pulse width P 2 s, f 15 kHz W Note 3: Exponential waveform I 0.3 A ( 2 s), I +0.3 A ( 2 s), Ta = 100 C OPH OPL Note 4: For the effective lead soldering area Note 5: Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Input current, ON (Note 6) I 7.5 10 mA F (ON) Input voltage, OFF V 0 0.8 V F (OFF) Supply voltage V 10 30 V CC Peak output current I / I 0.2 A OPH OPL Operating temperature T 40 100 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 6: Input signal rise time (fall time) < 0.5 s. 2019 2 2019-09-25 Toshiba Electronic Devices & Storage Corporation Detector LED

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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