Product Information

TLP383(D4YH-TL,E

TLP383(D4YH-TL,E electronic component of Toshiba

Datasheet
Transistor Output Optocouplers Photocoupler 80V .05A 5000Vrms

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1985 ea
Line Total: USD 595.5

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1818
6000 : USD 0.1787
12000 : USD 0.1756
18000 : USD 0.1726
24000 : USD 0.1695

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rise Time
Current Transfer Ratio
Fall Time
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Mounting Style
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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TLP383 Photocouplers Infrared LED & Photo Transistor TLP383TLP383TLP383TLP383 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Programmable Logic Controllers (PLCs) AC Adapters I/O Interface Boards 2. 2. 2. 2. GeneralGeneralGeneralGeneral TLP383 is a photocoupler of low input and high isolation type that consists of phototransistor optically coupled to infrared LED in a 4-pin SO6L package. TLP383 is guaranteed high isolation voltage (5000 Vrms) and wide operating temperature (T = -55 to 125 ). Since TLP383 has a small and thin package compared with a standard a DIP package, it is suitable for high-density surface mounting applications such as programmable controllers. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50 % (min) GB Rank: 100 % (min) (3) Isolation voltage: 5000 Vrms (min) (4) Operating temperature: -55 to 125 (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Option (D4) Note 1: When a VDE approved type is needed, please designate the Option (D4)Option (D4)Option (D4). 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 3: Cathode 4: Emitter 6: Collector 11-4P1A Start of commercial production 2015-01 2016-2019 2019-12-22 1 Toshiba Electronic Devices & Storage Corporation Rev.7.0TLP383 5. 5. 5. 5. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 8.0 mm Clearance 8.0 Internal isolation thickness 0.4 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit LED Input forward current I 50 mA F Input forward current derating (T 90 ) I /T -1.11 mA/ a F a Input forward current (pulsed) I (Note 1) 1 A FP Input power dissipation P 100 mW D Input power dissipation (T 90 ) P /T -2.22 mW/ a D a derating Input reverse voltage V 5 V R Junction temperature T 135 j Detector Collector-emitter voltage V 80 V CEO Emitter-collector voltage V 7 V ECO Collector current I 50 mA C Collector power dissipation P 150 mW C Collector power dissipation (T 25 ) P /T -1.36 mW/ a C a derating Junction temperature T 135 j Common Operating temperature T -55 to 125 opr Storage temperature T -55 to 125 stg Lead soldering temperature (10 s) T 260 sol Total power dissipation P 250 mW T Total power dissipation (T 25 ) P /T -2.27 mW/ a T a derating Isolation voltage (AC, 60 s, R.H. 60 %) BV (Note 2) 5000 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 0.1 ms, f = 100 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. 2016-2019 2019-12-22 2 Toshiba Electronic Devices & Storage Corporation Rev.7.0

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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