Product Information

TLP358

TLP358 electronic component of Toshiba

Datasheet
OPTOCOUPLER, GATE DRIVER, 3.75KV, DIP-8
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.7597 ea
Line Total: USD 3.76

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1

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TLP358
Toshiba

1 : USD 4.2865
10 : USD 3.0098
25 : USD 2.7777
50 : USD 2.5884
100 : USD 2.3563
500 : USD 2.0589

Read More Specifications

     
Manufacturer
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Isolation Voltage
Brand
No. Of Channels
Optocoupler Case Style
No. Of Pins
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Additional Infomation About Product

TLP358 Photocouplers GaAAs Infrared LED & Photo IC TLP358TLP358TLP358TLP358 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Industrial Inverters MOSFET Gate Drivers IGBT Gate Drivers Induction Cooktop and Home Appliances 2. 2. 2. 2. GeneralGeneralGeneralGeneral The TLP358 is a photocoupler in a DIP8 package that consists of a GaAAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. It has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of 20 kV/s. The TLP358 is ideal for IGBT and power MOSFET gate drive. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Buffer logic type (totem pole output) (2) Output peak current: 6.0 A (max) (3) Operating temperature: -40 to 100 (4) Supply current: 2 mA (max) (5) Supply voltage: 15 to 30 V (6) Threshold input current: 5 mA (max) (7) Propagation delay time: 500 ns (max) (8) Common-mode transient immunity: 20 kV/s (min) (9) Isolation voltage: 3750 Vrms (min) (10) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)(Note 1)(Note 1) Option (D4) Note 1: When a VDE approved type is needed, please designate the Option (D4)Option (D4)Option (D4). Start of commercial production 2009-06 2016 Toshiba Corporation 2016-01-19 1 Rev.4.0TLP358 4. 4. 4. 4. Packaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin Configuration 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: GND 6: N.C. 7: V (Output) O 8: V CC 11-10C4S 5. 5. 5. 5. Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note) Note: A 1.0-F bypass capacitor must be connected between pin 8 and pin 5. 6. 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 6.1. 6.1. 6.1. 6.1. Truth TableTruth TableTruth TableTruth Table Input LED M1 M2 Output H ON ON OFF H L OFF OFF ON L 6.2. 6.2. 6.2. 6.2. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters 7.62 mm Pitch 10.16 mm Pitch Characteristics Unit TLP358 TLP358F Creepage distances 7.0 (min) 8.0 (min) mm Clearance distances 7.0 (min) 8.0 (min) Internal isolation thickness 0.4 (min) 0.4 (min) 2016 Toshiba Corporation 2016-01-19 2 Rev.4.0

HS Compliance

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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