Product Information

TLP293-4(GB

TLP293-4(GB electronic component of Toshiba

Datasheet
OPTOCOUPLER, PHOTOTRANS, 3.75KV, SOIC-16

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.3956 ea
Line Total: USD 2.4

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

TLP293-4(GB
Toshiba

1 : USD 2.3956
10 : USD 1.4728
25 : USD 1.3486
50 : USD 1.2156
100 : USD 1.0824
500 : USD 0.964

     
Manufacturer
Product Category
Isolation Voltage
Brand
No. Of Channels
Optocoupler Case Style
No. Of Pins
Forward Current If Max
Ctr Min
Collector Emitter Voltage Vbrceo
Product Range
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TLP293-4 TOSHIBA PHOTOCOUPLER InGaAs IRED & PHOTO-TRANSISTOR TLP293-4 Programmable Controllers Switching Power Supplies Simplex/Multiplex Data Transmissions Unit: mm TLP293-4 consists of phototransistors optically coupled to InGaAs infrared emitting diodes. TLP293-4 photocoupler is housed in the very small and thin SO16 package. Since the TLP293-4 is guaranteed wide operating temperature range (Ta=- 55 to 125 C), and high isolation voltage (3750 Vrms), it is suitable for high- density surface mount applications such as programmable controllers. Collector-Emitter Voltage : 80 V (min) Current Transfer Ratio : 50% (min) GB rank: 100% (min) Isolation Voltage : 3750 Vrms (min) TOSHIBA 11-11F1 Weight: 0.19 g (typ.) Operation temperature range: -55 to 125 C Safety standards UL-approved: UL1577, File No. E67349 cUL-approved: CSA Component Acceptance Service No.5A, Pin Configuration File No. E67349 CQC- approved : GB4943.1, GB8898 TLP293-4 2000 m 1 16 VDE-approved : EN60747-5-5 (Note) 2 15 Note : When an EN60747-5-5 approved type is needed, please designate the Option (V4). 14 3 4 13 Construction Mechanical Rating 12 5 Creepage Distance 5.0 mm (min) Clearance 5.0 mm (min) 11 6 Internal isolation thickness 0.4 mm (min) 7 10 8 9 1,3,5,7 : Anode 2,4,6,8 : Cathode 9,11,13,15 : Emitter 10,12,14,16 : Collector Start of commercial production 2014-04 1 2015-10-21 TLP293-4 Current Transfer Ratio (Unless otherwise specified, Ta=25C) Current Transfer Ratio (%) Rank Test condition Marking of Classification I / I C F (Note 1) Min Max Blank 50 600 Blank IF = 5 mA, VCE = 5 V GB 100 600 GB LA (Note2) 50 600 LA IF = 0.5 mA, VCE = 5 V LGB (Note2) 100 600 LB Note1: Specify both the part number and a rank in this format when ordering. Example: rank GB: TLP293-4(GB,E For safety standard certification, however, specify the part number alone. TLP293 4 (GB,E: TLP293-4 Note2: The LA and LGB rank are made CTR rank of the low input current condition. 2 2015-10-21

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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