Product Information

TLP292-4

TLP292-4 electronic component of Toshiba

Datasheet
OPTOCOUPLER, PHOTOTRANS, 3.75KV, SOIC-16

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.5362 ea
Line Total: USD 2.54

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

TLP292-4
Toshiba

1 : USD 2.5451
10 : USD 1.7629
25 : USD 1.5135
50 : USD 1.3759
100 : USD 1.2383
500 : USD 1.1659

     
Manufacturer
Product Category
Isolation Voltage
Brand
No. Of Channels
Optocoupler Case Style
No. Of Pins
Forward Current If Max
Ctr Min
Collector Emitter Voltage Vbrceo
Product Range
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TLP292-4 TOSHIBA PHOTOCOUPLER InGaAs IRED & PHOTO-TRANSISTOR TLP292-4 Programmable Controllers Switching Power Supplies Simplex/Multiplex Data Transmissions Unit: mm TLP292-4 consists of phototransistors optically coupled to two InGaAs infrared emitting diodes connected inverse parallel, and can operate directly by AC input current. TLP292-4 is housed in the very small and thin SO16 package. Since TLP292-4 is guaranteed wide operating temperature (Ta=-55 to 125 C) and high isolation voltage (3750 Vrms), it is suitable for high-density surface mount applications such as programmable controllers. Collector-Emitter Voltage : 80 V (min) Current Transfer Ratio : 50% (min) Rank GB: 100 %(min) TOSHIBA 11-11F1 Isolation Voltage : 3750 Vrms (min) Weight: 0.19 g (typ.) Operation temperature range: -55 to 125 C Safety standards UL- approved: UL1577, File No. E67349 Pin Configuration cUL- approved: CSA Component Acceptance Service No.5A, TLP292-4 File No. E67349 CQC- approved : GB4943.1, GB8898 1 16 2 15 2000 m 3 14 VDE-under application : EN60747-5-5 (Note) Note : When an EN60747-5-5 approved type is needed, 13 4 please designate the Option (V4). 5 12 6 11 Construction Mechanical Rating 7 10 Creepage Distance 5.0 mm (min) 8 9 Clearance 5.0 mm (min) Internal isolation thickness 0.4 mm (min) 1,3,5,7 : Cathode, Anode 2,4,6,8 : Anode, Cathode 9,11,13,15 : Emitter 10,12,14,16 : Collector Start of commercial production 2014-04 1 2015-10-21 TLP292-4 Current Transfer Ratio (Unless otherwise specified, Ta=25C) Current Transfer Ratio (%) Rank Test condition Marking of Classification I / I C F (Note1) Min Max Blank IF =5 mA, VCE = 5 V 50 600 Brank GB 100 600 GB IF =0.5 mA, VCE = 5 V LA (Note2) 50 600 LA LGB (Note2) 100 600 LB Note 1: Specify both the part number and a rank in this format when ordering. Example: rank GB: TLP292-4(GB,E For safety standard certification, however, specify the part number alone. TLP292 4 (GB,E: TLP292-4 Note2: The LA and LGB rank are made CTR rank of the low input current condition. 2 2015-10-21

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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