Product Information

TLP290(GB-TP,SE(T

TLP290(GB-TP,SE(T electronic component of Toshiba

Datasheet
Optocouplers SO-4 RoHS

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

169: USD 0.2221 ea
Line Total: USD 37.53

3336 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 169  Multiples: 1
Pack Size: 1
Availability Price Quantity
115915 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 262
Multiples : 1
262 : USD 0.3386
500 : USD 0.3295
1000 : USD 0.3215
2500 : USD 0.3142
5000 : USD 0.308

3336 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 169
Multiples : 1
169 : USD 0.2221
200 : USD 0.2206
500 : USD 0.1867
1000 : USD 0.1807

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Current Transfer Ratio
Output Type
Isolation Voltage
Packaging
Input Type
Brand
Maximum Power Dissipation
Collector Current Dc
Collector-Emitter Voltage
Collector-Emitter Saturation Voltage
Pin Count
Forward Current
Forward Voltage
Mounting
Operating Temperature Classification
Rad Hardened
Output Device
Operating Temp Range
Number Of Elements
Brand Category
LoadingGif

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TLP290 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP290 Programmable Controllers Unit: mm AC/DC-Input Module Hybrid ICs TLP290 consist of photo transistor, optically coupled to two gallium arsenide infrared emitting diodes connected inverse parallel, and can operate directly by AC input current Since TLP290 is guaranteed wide operating temperature (Ta=-55 to 110 C) and high isolation voltage (3750Vrms), its suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs. Collector-Emitter voltage : 80 V (min) Current transfer ratio : 50% (min) Rank GB : 100% (min) Isolation voltage : 3750 Vrms (min) TOSHIBA 11-3C1 Guaranteed performance over -55 to 110 C Weight: 0.05 g (typ.) UL recognized : UL1577, File No. E67349 cUL approved : CSA Component Acceptance Service No.5A, Pin Configuration File No. 67349 TLP290 SEMKO approved : EN 60065: 2002, Approved no. 1200315 1 4 EN 60950-1: 2001, EN 60335-1: 2002, Approved no. 1200315 2 3 BSI approved : BS EN 60065: 2002, Approved no. 9036 : BS EN 60950-1: 2006, Approved no. 9037 1: Anode Option (V4) Cathode VDE approved: EN 60747-5-5 Certificate, No. 40009347 2: Cathode Maximum operating insulation voltage: 707 Vpk Anode Highest permissible over-voltage: 6000 Vpk 3: Emitter (Note) When an EN 60747-5-5 approved type is needed, 4: Collector please designate the Option(V4) Construction Mechanical Rating Creepage distance : 5.0 mm (min) Clearance : 5.0 mm (min) Insulation thickness : 0.4 mm (min) Start of commercial production 2012/02 1 2014-09-08 TLP290 Current Transfer Ratio (Unless otherwise specified, Ta = 25C) Current Transfer Ration (%) (I / I ) C F Classification TYPE Marking of Classification (Note1) I = 5 mA, V = 5 V, Ta = 25C F CE Min Max Blank 50 400 Blank, YE, GR, B, GB Rank Y 50 150 YE TLP290 Rank GR 100 300 GR Rank BLL 200 400 B Rank GB 100 400 GB Note1: Specify both the part number and a rank in this format when ordering (e.g.) rank GB: TLP290(GB,E Note: For safety standard certification, however, specify the part number alone. (e.g.) TLP290(GB,E: TLP290 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25C) Note Rating Characteristic Symbol Unit R.M.S. forward current I 50 mA F(RMS) Input forward current derating (Ta 90C) I /Ta -1.5 mA /C F Input forward current (pulsed) I (Note 2) 1 A FP Input power dissipation P 100 mW D Input power dissipation derating (Ta 90C) P / Ta -3.0 mW/C D Junction temperature T 125 C j Collector-emitter voltage V 80 V CEO Emitter-collector voltage V 7 V ECO Collector current I 50 mA C Collector power dissipation P 150 mW C Collector power dissipation derating (Ta 25C) P /Ta -1.5 mW /C C Junction temperature T 125 C j Operating temperature range T -55 to 110 C opr Storage temperature range T -55 to 125 C stg Lead soldering temperature T 260 (10s) C sol Total package power dissipation P 200 mW T Total package power dissipation derating (Ta 25C) P /Ta -2.0 mW /C T Isolation voltage BV (Note3) 3750 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note2: Pulse width 100s, frequency 100Hz Note3: AC, 1minute, R.H. 60%, Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. 2 2014-09-08 Detector LED

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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