Product Information

TLP168J

TLP168J electronic component of Toshiba

Datasheet
OPTOCOUPLER, TRIAC, 2.5KV, MFSOP-4
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8854 ea
Line Total: USD 1.89

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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TLP168J
Toshiba

1 : USD 1.8854
10 : USD 1.5233
100 : USD 1.2367
500 : USD 1.1384
1000 : USD 1.0156
2500 : USD 0.9173

Read More Specifications

     
Manufacturer
Product Category
Isolation Voltage
Brand
Optocoupler Case Style
No. Of Pins
Triac Operating Mode
Peak Repetitive Off-State Voltage Vdrm
Svhc
LoadingGif

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Additional Infomation About Product

TLP168J TOSHIBA Photocoupler GaAAs IRed & Photo-Triac TLP168J Triac Driver Unit: mm Programmable Controllers ACOutput Modules Solid State Relays The TOSHIBA mini-flat coupler TLP168J is a small-outline coupler suitable for surface mount assembly. The TLP168J consists of a GaAAs infrared emitting diode optically coupled to a triac-output photocoupler. Zero-voltage crossing turn-on Peak off-state voltage: 600 V (min) Trigger LED current: 3 mA (max) On-state current: 70 mA (max) Isolation voltage: 2500 Vrms (min) UL recognized: UL1577, File No. E67349 TOSHIBA 114C3 Weight: 0.09 g (typ.) Pin Configurations 1 6 zc 3 4 1: Anode 3: Cathode 4: Terminal 1 6: Terminal 2 Start of commercial production 1993/01 1 2014-09-01 TLP168J Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 20 mA F Forward current derating (Ta 25C) I / C 0.2 mA / C F Peak forward current (100 s pulse, 100 pps) I 1 A FP Reverse voltage V 5 V R Junction temperature T 125 C j Offstate output terminal voltage V 600 V DRM Ta = 25C 70 Onstate RMS current I mA T(RMS) Ta = 70C 40 Onstate current derating (Ta 25C) I / C 0.67 mA / C T Peak onstate current I 2 A TP (100 s pulse, 120 pps) Peak non-repetitive surge current I 1.2 A TSM (P =10 ms) W Junction temperature T 115 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 100 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage BV 2500 Vrms S (AC, 1 minute, R.H. 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/ Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). (Note 1) Device considered a twoterminal device: Pins 1 and 3 shorted together and Pin 4 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol MinTyp.MaxUnit Supply voltage V 240 Vac AC Forward current I 4.5 6 7.5 mA F Peak onstate current I 1 A TP Operating temperature T 10 85 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2014-09-01 Detector LED

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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