Product Information

TJ30S06M3L(T6L1,NQ

TJ30S06M3L(T6L1,NQ electronic component of Toshiba

Datasheet
MOSFET P-Ch MOS -30A -60V 68W 3950pF 0.0218
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 0.7912 ea
Line Total: USD 1582.4

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 2000
Multiples : 2000
2000 : USD 1.1653
4000 : USD 1.1536
6000 : USD 1.1421
8000 : USD 1.1307
10000 : USD 1.1194
12000 : USD 1.1082
20000 : USD 1.0971
30000 : USD 1.0861
50000 : USD 1.0753

0 - WHS 2


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 4.3808
10 : USD 1.5814
100 : USD 1.2394
500 : USD 1.0161
1000 : USD 0.8761

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "Toshiba"

Image Description
TJ40S04M3L(T6L1,NQ electronic component of Toshiba TJ40S04M3L(T6L1,NQ

Toshiba MOSFET P-Ch MOS -40A -40V 68W 4140pF 0.0091
Stock : 0

TJ50S06M3L(T6L1,NQ electronic component of Toshiba TJ50S06M3L(T6L1,NQ

Toshiba MOSFET P-Ch MOS -50A -60V 90W 6290pF 0.0138
Stock : 704

TJ8S06M3L electronic component of Toshiba TJ8S06M3L

MOSFET, P-CH, -10V, -8A, TO-252
Stock : 0

TK100A06N1,S4X electronic component of Toshiba TK100A06N1,S4X

MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V
Stock : 0

TJ8S06M3L(T6L1,NQ) electronic component of Toshiba TJ8S06M3L(T6L1,NQ)

Toshiba MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104
Stock : 14

TJ60S06M3L(T6L1,NQ electronic component of Toshiba TJ60S06M3L(T6L1,NQ

MOSFET P-Ch MOS -60A -60V 100W 7760pF 0.0112
Stock : 0

TJ60S04M3L(T6L1,NQ electronic component of Toshiba TJ60S04M3L(T6L1,NQ

MOSFET P-Ch MOS -60A -40V 90W 6510pF 0.0063
Stock : 0

TK040N65Z,S1F electronic component of Toshiba TK040N65Z,S1F

MOSFET Power MOSFET 57A 360W 650V
Stock : 2797

TJ9A10M3,S4Q electronic component of Toshiba TJ9A10M3,S4Q

Transistor: P-MOSFET; unipolar; -100V; -9A; 19W; TO220FP
Stock : 0

TK090Z65Z,S1F electronic component of Toshiba TK090Z65Z,S1F

MOSFET PWR MOSFET PD=230W F=1MHZ
Stock : 23

More Products By Category "MOSFET"

Image Description
DMN32D4SDW-7 electronic component of Diodes Incorporated DMN32D4SDW-7

MOSFET 30V N-Ch Enh Mode 20Vgs 50pF 0.6nC
Stock : 99688

TSM1NB60CW RPG electronic component of Taiwan Semiconductor TSM1NB60CW RPG

MOSFET 600V 1A Single N-Channel Power MOSFET
Stock : 2835

SI7374DP-T1-E3 electronic component of Vishay SI7374DP-T1-E3

MOSFET 30V 24A 56W 5.5mohm @ 10V
Stock : 0

DMN2005UPS-13 electronic component of Diodes Incorporated DMN2005UPS-13

MOSFET N-Ch Enh Mode FET 20Vdss 12Vgss 30A
Stock : 2500

DMN1250UFEL-7 electronic component of Diodes Incorporated DMN1250UFEL-7

MOSFET 8 N-Ch FET 4.5V 280mOhm 12Vdss
Stock : 3472

MTM861280LBF electronic component of Panasonic MTM861280LBF

MOSFET PCH MOS FET FLT LD 1.6x1.6mm
Stock : 0

SI8401DB-T1-E3 electronic component of Vishay SI8401DB-T1-E3

MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V
Stock : 0

SUM70101EL-GE3 electronic component of Vishay SUM70101EL-GE3

MOSFET -100V Vds 20V Vgs TO-263
Stock : 0

DMP2005UFG-7 electronic component of Diodes Incorporated DMP2005UFG-7

MOSFET MOSFET BVDSS: 8V-24V
Stock : 0

DMT4011LFG-13 electronic component of Diodes Incorporated DMT4011LFG-13

MOSFET MOSFET BVDSS: 31V-40V
Stock : 2869

Additional Infomation About Product

TJ30S06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ30S06M3LTJ30S06M3LTJ30S06M3LTJ30S06M3L 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 16.8 m (typ.) (V = -10 V) DS(ON) GS (3) Low leakage current: I = -10 A (max) (V = -60 V) DSS DS (4) Enhancement mode: V = -2.0 to -3.0 V (V = -10 V, I = -1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 2011-03 2020 2020-06-24 1 Toshiba Electronic Devices & Storage Corporation Rev.9.0TJ30S06M3L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -60 V DSS Gate-source voltage V -20/+10 GSS Drain current (DC) (Note 1) I -30 A D Drain current (pulsed) (Note 1) I -60 DP Power dissipation (T = 25) P 68 W c D Single-pulse avalanche energy (Note 2) E 71 mJ AS Avalanche current I -30 A AR Channel temperature (Note 3) T 175 ch Storage temperature (Note 3) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 2.2 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: V = -25 V, T = 25 (initial), L = 107 H, R = 25 , I = -30 A DD ch G AR Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2020 2020-06-24 2 Toshiba Electronic Devices & Storage Corporation Rev.9.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted