X-On Electronics has gained recognition as a prominent supplier of TJ20A10M3(STA4,Q mosfet across the USA, India, Europe, Australia, and various other global locations. TJ20A10M3(STA4,Q mosfet are a product manufactured by Toshiba. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

TJ20A10M3(STA4,Q Toshiba

TJ20A10M3(STA4,Q electronic component of Toshiba
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See Product Specifications
Part No.TJ20A10M3(STA4,Q
Manufacturer: Toshiba
Category:MOSFET
Description: MOSFET PWR MOSFET PD=35 F=1MHZ
Datasheet: TJ20A10M3(STA4,Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.3101
10 : USD 0.9652
100 : USD 0.741
500 : USD 0.6292
1000 : USD 0.4913
2500 : USD 0.4662
10000 : USD 0.4438
25000 : USD 0.4438
50000 : USD 0.4425
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TJ20A10M3(STA4,Q from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TJ20A10M3(STA4,Q and other electronic components in the MOSFET category and beyond.

TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Applications Low drain-source ON resistance: R = 63 m (typ.) DS (ON) Unit: mm High forward transfer admittance: Y = 50 S (typ.) fs Low leakage current: I = 10 A (max) (V = 100 V) DSS DS Enhancement-model: V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Drain-gate voltage (R = 20 k) V 100 V GS DGR Gate-source voltage V 20 V GSS DC (Note 1) I 20 D Drain current A Pulse (Note 1) I 40 DP Drain power dissipation (Tc = 25C) P 35 W D Single pulse avalanche energy 1: Gate E 124 mJ AS (Note 2) 2: Drain 3: Source Avalanche current I 20 A AS Repetitive avalanche energy (Note 3) E 2.29 mJ AR JEDEC Channel temperature T 150 C ch JEITA SC-67 Storage temperature range T 55 to 150 C stg TOSHIBA 2-10U1B Note: Using continuously under heavy loads (e.g. the application of Weight: 1.7 g (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this produc tto decrease in the reliability significantly even if the operating condition s(i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability dat(ai.e . reliability test report and estimated failure rate, etc). Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 25 V, Tch = 25C, L = 500 H, RG = 25 , IAS = 20 A Note 3: Repetitive rating pulse width limited by maximum channel temperature. Thermal Characteristics 2 Characteristics Symbol Max Unit 1 Thermal resistance, channel to case R 3.57 C / W th (chc) Thermal resistance, channel to R 62.5 C / W th (cha) ambient 3 Start of commercial production This transistor is an electrostatic sensitive device. Please handle with caution. 2009-03 1 2018-06-01 TJ20A10M3 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = 20 V, V = 0 V 100 nA GSS GS DS Drain cut-OFF current I V = 100 V, V = 0 V 10 A DSS DS GS V I = 10 mA, V = 0 V 100 (BR) DSS D GS Drain-source breakdown voltage V V I = 10 mA, V = 20 V 75 (BR) DSX D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON resistance R V = 10 V, I = 10 A 63 90 m DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 10 A 25 50 S fs DS D Input capacitance C 5500 iss Reverse transfer capacitance C V = 10V, V = 0 V, f = 1 MHz 200 pF rss DS GS Output capacitance C 290 oss Rise time t 13 r 0 V I = 10 A D V V GS OUT 10 V Turn-on time t 27 on R = 5 L Switching time ns Fall time t 105 f V 50 V DD Duty 1%, t = 10 s w Turn-off time t 420 off Total gate charge Q 120 g (gate-source plus gate-drain) V 80 V, V = 10 V, DD GS nC Gate-source charge Q 20 gs1 I = 20 A D Gate-drain (miller) charge Q 32 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) I 20 A DR Pulse drain reverse current (Note 1) IDRP 40 A Forward voltage (diode) V I = 20 A, V = 0 V 1.4 V DSF DR GS Reverse recovery time t I = 20 A, V = 0 V, 76 ns rr DR GS dI /dt = 50 A/s Reverse recovery charge Q DR 104 nC rr Marking Note 4: A line under a Lot No. identifies the indication of product Labels Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Part No. (or abbreviation code) Please contact your TOSHIBA sales representative for details as to J 2 0A 10 M environmental matters such as the RoHS compatibility of Product. Lot No. 3 The RoHS is Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain Note 4 hazardous substances in electrical and electronic equipment. 2 2018-06-01 4.7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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