Product Information

TCR5BM12,L3F

TCR5BM12,L3F electronic component of Toshiba

Datasheet
LDO Voltage Regulators LDO Voltage Reg 500mA 600mW 1.2V
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.858 ea
Line Total: USD 0.86

3344 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3329 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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TCR5BM12,L3F
Toshiba

1 : USD 0.4912
10 : USD 0.3713
100 : USD 0.2112
1000 : USD 0.1531
5000 : USD 0.1448
10000 : USD 0.1364
25000 : USD 0.1317
50000 : USD 0.1293
100000 : USD 0.1269

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Output Voltage
Output Current
Number of Outputs
Polarity
Quiescent Current
Input Voltage MIN
Input Voltage MAX
PSRR / Ripple Rejection - Typ
Output Type
Minimum Operating Temperature
Maximum Operating Temperature
Dropout Voltage
Series
Packaging
Product
Type
Brand
Dropout Voltage - Max
Output Voltage Range
Voltage Regulation Accuracy
Line Regulation
Load Regulation
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

TCR5BM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5BM series 500 mA CMOS Ultra Low Dropout Regulator The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that allows ultra low dropout of 100 mV (Typ.) at I = 500 mA (1.1 OUT V output, V = 3.3 V). BIAS These voltage regulators are available in fixed output voltages between 0.8 V and 3.6 V, and capable of driving up to 500 mA. Other features include overcurrent protection, thermal shutdown, and Auto-discharge. The TCR5BM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm t 0.38 mm). As small ceramic input and output capacitors can be used with the DFN5B TCR5BM series, these devices are ideal for portable applications that require Weight : 1.4 mg (Typ.) high-density board assembly such as cellular phones. Features Low dropout voltage V = 100 mV (Typ.) at 1.1 V output, V = 3.3 V , I = 500 mA DO BIAS OUT Low stand-by current (I = 1 A (Max)) BIAS(OFF) Low quiescent bias current ( I = 19 A (Typ.) at V = 5.3 V, I = 0 mA ) BIAS(ON) BIAS OUT Wide range output voltage line up V = 0.8 to 3.6 V OUT Overcurrent protection Thermal shutdown Inrush current reduction Under voltage lockout (TCR5BMxxA products) Auto-discharge Pull down connection between CONTROL and GND Ultra small package DFN5B (1.2 mm x 1.2 mm t 0.38 mm) Start of commercial production 2018-08 2018-2019 2019-01-15 1 Toshiba Electronic Devices & Storage Corporation TCR5BM series Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Bias voltage V -0.3 to 6.0 V BIAS Input voltage V -0.3 to 6.0 V IN Control voltage V -0.3 to 6.0 V CT Output voltage V -0.3 to V + 0.3 6.0 V OUT IN Power dissipation P 600 (Note 1) mW D Junction temperature T -40 to 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Rating at mounting on a board (Glass epoxy board dimension : 40 mm x 40 mm (4layer)t = 1.8 mm Metal pattern ratio : approximately 70 % each layer) Operating Ranges Characteristics Symbol Rating Unit Bias voltage V (V + 1.4 2.5) to 5.5 V BIAS OUT Input voltage V V + V to V V IN OUT DO BIAS Control voltage V 0 to V V CT BIAS Output voltage V 0.8 to 3.6 V OUT Output current I 0 to 0.5 (Note 2) A OUT Operation Temperature T 40 to 85 C opr COUT C 2.2 F OUT CIN C 1.0 F IN CBIAS C 0.1 F BIAS Note 2: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. Maximum operating ranges output current specification defined as lifetime average junction temperature of +45C where max rated DC current = lifetime average current to avoid electro migration. 2018-2019 2019-01-15 2 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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