TCKE8xx Series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCKE8xx Series 18 V, 5A eFuse IC with Adjustable Overcurrent Protection and Reverse Current Blocking FET Control The TCKE8xx series is 18 V high input voltage Single Input-Single Output eFuse ICs. It can be used as a reusable fuse, and includes protection features like adjustable over current limit by an external resistor, short circuit protection, over voltage clamp, adjustable slew rete control by an external capacitance, under voltage protection, thermal shutdown and reverse current blocking by external MOSFET control circuit. Switch ON resistance is only 28 m (typ.), high output current is up to 5.0 A, and wide input voltage operation characteristics makes this series ideal for power management applications such as in the power supply circuit of hard disk drive and battery charging applications. WSON10B This series is available in 0.5 mm pitch small package WSON10B (3.0 mm x 3.0 mm, t: 0.7 mm (typ.)). Thus this series is ideal for Weight : 19.3mg ( typ.) various applications such as portable electronics that require high-density soldering Feature High input voltage: V = 18.0 V IN max High output current: I = 5.0 A OUT (DC) Low ON resistance : R = 28 m (typ.) ON Adjustable overcurrent limit : up to 5.0 A Fixed over voltage clamp 5V power rail TCKE805 : V = 6.04 V (typ.) OVC 12V power rail TCKE812 : V = 15.1 V (typ.) OVC TCKE800 : No over voltage clamp Programmable slew rate control by external capacitance for inrush current reduction Programmable under voltage lockout by external resistor Reverse current blocking support by built in MOSFET driver Thermal shutdown Auto-discharge Small package: WSON10B (3.0 mm x 3.0 mm, t: 0.7 mm (typ.)) IEC62368-1 Certified Notice This series is sensitive to electrostatic discharge. Please ensure equipment and tools are adequately earthed when handling. Start of commercial production 2019-09 1 2021-07-05 2019-2021 Toshiba Electronic Devices & Storage Corporation TCKE8xx Series Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Input voltage V -0.3 to 18.0 V IN ILIM voltage V -0.3 to 6.0 V ILIM dV/dT voltage V -0.3 to 6.0 V dV/dT Control voltage V -0.3 to 18.0 V EN/UVLO Output voltage V -0.3 to V + 0.3 or 18.0 V which is smaller V OUT IN External MOSFET voltage V -0.3 to 30.0 V EFET Power dissipation P 2.4 (Note 1) W D Junction temperature Tj 150 C Storage temperature T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board: FR4 board. (76.2mm * 114.3mm * 1.6mm, 4 layer ) Operating Ranges Characteristics Symbol Ranges Unit Input voltage V 4.4 to 18.0 V IN Output current I Continuous output current 0 to 5.0 A OUT ILIM External resistance R 20 to 300 k ILIM Control voltage V 0 to 18 V EN/UVLO External MOSFET voltage V 0 to V + 4.9 V EFET IN Operating Ambient Ta 40 to 85 C opr temperature range External capacitance C 1 (typ.), 100 (max) nF dV/dT 2 2021-07-05 2019-2021 Toshiba Electronic Devices & Storage Corporation