SSM3J135TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J135TU Power Management Switch Applications 1.5 V drive Unit: mm Low ON-resistance: RDS(ON) = 260 m (max) ( V = -1.5 V) GS RDS(ON) = 180 m (max) ( V = -1.8 V) GS RDS(ON) = 132 m (max) ( V = -2.5 V) GS RDS(ON) = 103 m (max) ( V = -4.5 V) GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V DSS Gate-Source voltage V 8 V GSS DC I (Note 1) -3.0 D Drain current A Pulse I (Note 1) -6.0 DP P (Note 2) 500 D Power dissipation mW t < 1s 1000 Channel temperature T 150 C 1: Gate ch 2: Source Storage temperature range T 55 to 150 C stg 3: Drain Note: Using continuously under heavy loads (e.g. the application of high UFM temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. JEITA operating temperature/current/voltage, etc.) are within the absolute maximum ratings. TOSHIBA 2-2U1A Please design the appropriate reliability upon reviewing the Weight: 6.6mg (typ.) Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150C during use. Note 2: Mounted on FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 3 3 JJN 1 2 1 2 Start of commercial production 2011-02 1 2014-03-01 SSM3J135TU Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 V (BR) DSS D GS Drain-source breakdown voltage V I = -1 mA, V = 5 V .(Note 4) -15 V (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -1.0 A (Note 3) 2.2 4.4 S fs DS D I = -1.0 A, V = -4.5 V (Note 3) 79 103 D GS I = -0.6 A, V = -2.5 V (Note 3) 98 132 D GS Drainsource ON-resistance R m DS (ON) I = -0.4 A, V = -1.8 V (Note 3) 117 180 D GS I = -0.2 A, V = -1.5 V (Note 3) 137 260 D GS Input capacitance C 270 iss V = -10 V, V = 0 V DS GS pF Output capacitance C 40 oss f = 1 MHz Reverse transfer capacitance C 32 rss Turn-on time t V = -10 V, I = -1.0 A 17 on DD D Switching time ns V = 0 to -2.5 V, R = 4.7 Turn-off time t 43 GS G off Total gate charge Q 4.6 g V = -10 V, I = -2.0 A, DD D nC Gate-source charge Q 0.4 gs1 V = -4.5V GS Gate-drain charge Q 0.9 gd Drain-source forward voltage V I = 3.0 A, V = 0 V (Note 3) 0.91 1.2 V DSF D GS Note 3: Pulse test Note 4: If a forward bias is applied between gate and source, this device enters V mode. Note that the (BR)DSX drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit 0 V (a) Test Circuit (b) V IN 90% OUT 0 IN 10% 2.5 V 2.5V R L V DS (ON) 90% (c) V 10 s OUT V DD V = 10 V 10% DD V DD R = 4.7 G t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common Source Ta = 25C Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = -1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration. 2 2014-03-01 R G