Product Information

1SV281(TPH3,F)

1SV281(TPH3,F) electronic component of Toshiba

Datasheet
Toshiba Varactor Diodes Variable Capacitance Diodes
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.401 ea
Line Total: USD 0.4

726 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
11087 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 5
Multiples : 5
5 : USD 0.2149
50 : USD 0.1621
150 : USD 0.1396
500 : USD 0.1113
2500 : USD 0.0988
4000 : USD 0.0914

726 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.401
10 : USD 0.2824
100 : USD 0.1281
1000 : USD 0.0949
4000 : USD 0.0937
8000 : USD 0.0842
24000 : USD 0.0831
48000 : USD 0.0772
100000 : USD 0.0736

3783 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 193
Multiples : 1
193 : USD 0.2051
211 : USD 0.1878
500 : USD 0.1609
1000 : USD 0.1494
2000 : USD 0.1483

7760 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 4000
Multiples : 4000
4000 : USD 0.0772
24000 : USD 0.0755

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Capacitance
Vr - Reverse Voltage
Mounting Style
Package / Case
Maximum Operating Temperature
Configuration
Packaging
Brand
Minimum Tuning Ratio
Factory Pack Quantity :
Tuning Ratio Test Condition
Application
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

1SV281 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 VCO for V/UHF Band Radio Unit: mm High capacitance ratio: C / C = 2.0 (typ.) 1V 4V Low series resistance: r = 0.28 (typ.) s Useful for small size tuner. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 10 V R Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC absolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA Toshiba Semiconductor Reliability Handbook (Handling TOSHIBA 1-1G1A Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, Weight: 0.0014 g (typ.) etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 1 A 10 V R R Reverse current I V = 10 V 3 nA R R Capacitance C V = 1 V, f = 1 MHz 15 16 17 pF 1V R Capacitance C V = 4 V, f = 1 MHz 7.3 8.0 8.7 pF 4V R Capacitance ratio C / C 1.8 2.0 1V 4V Series resistance r V = 1 V, f = 470 MHz 0.28 0.5 s R Marking Start of commercial production 1994-07 1 2014-03-01 1SV281 C (Ta) C (25) Note: = 100 (%) C C (25) 2 2014-03-01 (Note)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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