Product Information

1SS184,LF

1SS184,LF electronic component of Toshiba

Datasheet
Toshiba Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A 80V VR
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0736 ea
Line Total: USD 0.07

5244 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5244 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

1SS184,LF
Toshiba

1 : USD 0.0736
10 : USD 0.073
25 : USD 0.0709
100 : USD 0.0484
250 : USD 0.0313
500 : USD 0.0307
1000 : USD 0.0307
3000 : USD 0.0307

3977 - WHS 2


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 5
Multiples : 5

Stock Image

1SS184,LF
Toshiba

5 : USD 0.1632
50 : USD 0.1336
150 : USD 0.1188
500 : USD 0.1077
3000 : USD 0.0988
6000 : USD 0.0944

5244 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 244
Multiples : 1

Stock Image

1SS184,LF
Toshiba

244 : USD 0.0484
250 : USD 0.0313
500 : USD 0.0307

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
Category
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Additional Infomation About Product

1SS184 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Unit: mm Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) Small package: SC-59 Low forward voltage: V = 0.90 V (typ.) F (3) Fast reverse recovery time: t = 1.6 ns (typ.) rr Small total capacitance: C = 0.9 pF (typ.) T Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 2 * A FSM JEDEC TO-236MOD (Note 2, 4) 200 PD JEITA SC-59 Power dissipation mW P (Note 3) 150 D 2-3F1S TOSHIBA T (Note 2) 150 j Weight: 12 mg (typ.) Junction temperature C T (Note 3) 125 j T (Note 2) 55 to 150 stg Storage temperature C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) *: Unit rating. Total rating = Unit rating 1.5. Start of commercial production 1982-03 2017-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS184 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.60 F (1) F Forward voltage V I = 10 mA 0.72 V F (2) F V I = 100 mA 0.90 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 0.9 3.0 pF T R Reverse recovery time t I = 10 mA (Fig.1) 1.6 4.0 ns rr F Marking Fig.1 Reverse Recovery Time (t ) Test Circuit rr 2017-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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