Product Information

XP151A11B0MR-G

XP151A11B0MR-G electronic component of Torex Semiconductor

Datasheet
MOSFET Power MOSFET, 30V, 1A, N-Type, SOT-23

Manufacturer: Torex Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Shipping Restricted
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

XP151A11B0MR-G
Torex Semiconductor

1 : USD 1.6829
10 : USD 0.7932
100 : USD 0.3997
500 : USD 0.3386
1000 : USD 0.262
3000 : USD 0.2382
6000 : USD 0.2226
9000 : USD 0.2092
24000 : USD 0.203
N/A

Shipping Restricted
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

XP151A11B0MR-G
Torex Semiconductor

1 : USD 1.0896
25 : USD 0.6418
54 : USD 0.2945
147 : USD 0.2781
500 : USD 0.2781
N/A

Shipping Restricted
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
XP151A12A2MR-G electronic component of Torex Semiconductor XP151A12A2MR-G

MOSFET Power MOSFET, 20V, 1A, N-Type, SOT-23
Stock : 0

XP161A1355PR-G electronic component of Torex Semiconductor XP161A1355PR-G

MOSFET Power MOSFET, 20V, 4A, N-Type, SOT-89
Stock : 0

XP162A11C0PR-G electronic component of Torex Semiconductor XP162A11C0PR-G

MOSFET Power MOSFET, -30V, 2.5A, P-Type, SOT-89
Stock : 0

XP162A12A6PR-G electronic component of Torex Semiconductor XP162A12A6PR-G

MOSFET Power MOSFET, -20V, 2.5A, P-Type, SOT-89
Stock : 0

XP161A11A1PR-G electronic component of Torex Semiconductor XP161A11A1PR-G

MOSFET Power MOSFET, 30V, 4A, N-Type, SOT-89
Stock : 0

XP161A1265PR-G electronic component of Torex Semiconductor XP161A1265PR-G

MOSFET Power MOSFET, 20V, 4A, N-Type, SOT-89
Stock : 0

XP152A12C0MR electronic component of Torex Semiconductor XP152A12C0MR

MOSFET P Trench 20V 700mA 300 mO @ 400mA,4.5V SOT-23 (SOT-23-3) RoHS
Stock : 0

XP151A13A0MR electronic component of Torex Semiconductor XP151A13A0MR

MOSFET N Trench 20V 1A 100 mΩ @ 500mA,4.5V SOT-23-3L RoHS
Stock : 165

XP162A12A6PR electronic component of Torex Semiconductor XP162A12A6PR

MOSFET P Trench 20V 2.5A 1.2V @ 1mA 170 mΩ @ 1.5A,4.5V SOT-89 (SOT-89-3) RoHS
Stock : 1310

XP161A1355PR electronic component of Torex Semiconductor XP161A1355PR

MOSFET N Trench 20V 4A 50 mΩ @ 2A,4.5V SOT-89 (SOT-89-3) RoHS
Stock : 0

Image Description
STB46N30M5 electronic component of STMicroelectronics STB46N30M5

MOSFET N-channel 300 V, 0.037 Ohm typ., 53 A MDmesh M5 Power MOSFET in a D2PAK Package
Stock : 0

APT20M36BFLLG electronic component of Microchip APT20M36BFLLG

MOSFET FG, FREDFET, 200V, TO-247, RoHS
Stock : 0

DMN3007LSSQ-13 electronic component of Diodes Incorporated DMN3007LSSQ-13

MOSFET MOSFETBVDSS: 25V-30V
Stock : 57

IXFR64N50P electronic component of IXYS IXFR64N50P

MOSFET 500V 64A
Stock : 0

IXFT26N60P electronic component of IXYS IXFT26N60P

MOSFET 600V 26A
Stock : 0

BSZ040N06LS5ATMA1 electronic component of Infineon BSZ040N06LS5ATMA1

60V 40A 69W 4mO@20A,10V N Channel TSDSON-8-FL MOSFETs ROHS
Stock : 5000

AUIRFS4010-7P electronic component of Infineon AUIRFS4010-7P

MOSFET 100V 190A 4 mOhm Automotive MOSFET
Stock : 0

PSMN7R5-60YLX electronic component of Nexperia PSMN7R5-60YLX

MOSFET PSMN7R5-60YL/LFPAK/REEL 7" Q1/
Stock : 13575

IRF6785MTRPBF electronic component of Infineon IRF6785MTRPBF

Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET
Stock : 4010

XP151A11B0MR-G ETR1117 003 Power MOSFET GENERAL DESCRIPTION The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. FEATURES APPLICATIONS Low On-State Resistance : Rds(on) = 0.12 Vgs = 10V Notebook PCs : Rds(on) = 0.17 Vgs = 4.5V Cellular and portable phones Ultra High-Speed Switching On-board power supplies Gate Protect Diode Built-in Driving Voltage : 4.5V Li-ion battery systems N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free PIN CONFIGURATION/ PRODUCT NAMES MARKING PRODUCTS PACKAGE ORDER UNIT XP151A11B0MR SOT-23 3,000/Reel (*) 1 1 1 x XP151A11B0MR-G SOT-23 3,000/Reel (*) The -G suffix denotes Halogen and Antimony free as well as GGate being fully RoHS compliant. S Source DDrain * x represents production lot number. EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS Ta = 25 PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Vdss 30 V Gate - Source Voltage Vgss 20 V Drain Current (DC) Id 1 A Drain Current (Pulse) Idp 4 A Reverse Drain Current Idr 1 A Channel Power Dissipation * Pd 0.5 W Channel Temperature Tch 150 Storage Temperature Tstg -55~150 * When implemented on a ceramic PCB 1/5 XP151A11B0MR-G ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds= 30V, Vgs= 0V - - 10 A Gate-Source Leak Current Igss Vgs= 20V, Vds= 0V - - 10 A Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 1.0 - 3.0 V Id= 0.5A, Vgs= 10V - 0.09 0.12 Drain-Source On-State Resistance *1 Rds(on) Id= 0.5A, Vgs= 4.5V - 0.13 0.17 Forward Transfer Admittance *1 Yfs Id= 0.5A, Vds= 10V - 2.4 - S Body Drain Diode Vf If= 1A, Vgs= 0V - 0.8 1.1 V Forward Voltage *1 Effective during pulse test. Dynamic Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Input Capacitance Ciss - 150 - pF Vds= 10V, Vgs=0V Output Capacitance Coss - 90 - pF f=1MHz Feedback Capacitance Crss - 30 - pF Switching Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Turn-On Delay Time td (on) - 10 - ns Rise Time tr - 15 - ns Vgs= 5V, Id= 0.5A Vdd= 10V Turn-Off Delay Time td (off) - 25 - ns Fall Time tf - 45 - ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance Rth (ch-a) Implement on a ceramic PCB - 250 - /W (Channel-Ambience) 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
TOREX
Torex Semicon
Torex Semiconductor Ltd

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted