Product Information

TSM055N03PQ56 RLG

Hot TSM055N03PQ56 RLG electronic component of Taiwan Semiconductor

Datasheet
MOSFET 30V N 80Amp 5,5mohm channel Mosfet
Manufacturer: Taiwan Semiconductor
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Price (USD)

1: USD 0.1178 ea
Line Total: USD 0.12

4743 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4743 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

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TSM055N03PQ56 RLG
Taiwan Semiconductor

1 : USD 0.1178
10 : USD 0.0885
25 : USD 0.0876
50 : USD 0.0867
100 : USD 0.0857
250 : USD 0.0469
500 : USD 0.046
1000 : USD 0.046
3000 : USD 0.046

4815 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

TSM055N03PQ56 RLG
Taiwan Semiconductor

1 : USD 0.6417
10 : USD 0.5612
100 : USD 0.4404
5000 : USD 0.2852
25000 : USD 0.2783

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

TSM055N03PQ56 30V N-Channel MOSFET Key Parameter Performance Pin Definition: PDFN56 1. Source 8. Drain Parameter Value Unit 2. Source 7. Drain V 30 V 3. Source 6. Drain DS 4. Gate 5. Drain 5.5 V = 10V GS R (max) m DS(on) Note: V = 4.5V 8.5 GS MSL 1 (Moisture Sensitivity Level) per J-STD-020 Q 11.1 nC g Ordering Information Block Diagram Part No. Package Packing TSM055N03PQ56 RLG PDFN56 2.5kpcs / 13 Reel Note: Halogen-free according to IEC 61249-2-21 definition N-Channel MOSFET Absolute Maximum Ratings (Tc=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T =25 80 C Continuous Drain Current I A D T =100 51 C (Note 1) Drain Current-Pulsed I 320 A DM (Note 2) Single Pulse Avalanche Energy E 88 mJ AS Maximum Power Dissipation T = 25 P 74 W C D Storage Temperature Range T -55 to +150 STG Operating Junction Temperature Range T -55 to +150 J Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case R 1.7 /W JC Thermal Resistance - Junction to Ambient R 62 /W JA 1/5 Version: B1710 TSM055N03PQ56 30V N-Channel MOSFET Electrical Specifications (T = 25 unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A GS D BV 30 -- -- V DSS V = 10V, I = 20A -- 4.5 5.5 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 10A 6.3 8.5 GS D Gate Threshold Voltage V = V , I = 250A DS GS D V 1.2 1.6 2.5 V GS(TH) V = 30V, V = 0V DS GS -- -- 1 A Zero Gate Voltage Drain Current I V = 24V, V = 0V, DSS DS GS -- -- 10 A T = 125 J Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Dynamic (Note 3,4) Total Gate Charge Q -- 11.1 -- g V = 15V, I = 20A, (Note 3,4) DS D Gate-Source Charge Q -- 1.85 -- nC gs V = 4.5V GS (Note 3,4) Gate-Drain Charge Q -- 6.8 -- gd Input Capacitance 1160 C -- -- iss V = 25V, V = 0V, DS GS Output Capacitance 200 C -- -- pF oss f = 1.0MHz Reverse Transfer Capacitance 180 C -- -- rss Switching (Note 3,4) Turn-On Delay Time t -- 7.5 -- d(on) (Note 3,4) Turn-On Rise Time t -- 14.5 -- V = 10V, V = 15V, r GS DS ns (Note 3,4) R = 3.3, I = 15A Turn-Off Delay Time t -- 35.2 -- G D d(off) (Note 3,4) Turn-Off Fall Time t -- 9.6 -- f Drain-Source Diode Characteristics and Maximum Rating Maximum Continuous Drain- I -- -- 80 A S Source Diode Forward Current Integral reverse diode in the MOSFET Maximum Pulse Drain-Source I -- -- 320 A SM Diode Forward Current Drain-Source Diode Forward V = 0V, I = 1A V -- -- 1 V GS S SD Voltage Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. V = 25V, V = 10V, L = 0.1mH, I = 42A, R = 25, Starting T = 25. DD GS AS G J 3. Pulse test: pulse width 300s, duty cycle 2% 4. Essentially independent of operating temperature. 2/5 Version: B1710

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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