Product Information

SMCJ51CA V6G

SMCJ51CA V6G electronic component of Taiwan Semiconductor

Datasheet
ESD Suppressors TVS Diodes 1500W 59.7V 5% Bidirectional TVS

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2969 ea
Line Total: USD 1.3

2910 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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SMCJ51CA V6G
Taiwan Semiconductor

1 : USD 0.9029
10 : USD 0.7819
100 : USD 0.5541
500 : USD 0.4758
1000 : USD 0.4259
3000 : USD 0.3666
6000 : USD 0.3666
9000 : USD 0.3548
24000 : USD 0.3512

     
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SMCJ5.0(A) - SMCJ170(A) Taiwan Semiconductor 1500W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS Ideal for automated placement PARAMETER VALUE UNIT Glass passivated junction V 5 - 170 V WM Excellent clamping capability V 6.4 - 231 V Fast response time: Typically less than BR 1.0ps from 0 V to BV min P 1500 W PK Typical I less than 1A above 10V R T 150 C J MAX Moisture sensitivity level: level 1, per J-STD-020 Package DO-214AB (SMC) AEC-Q101 qualified available: ordering code with suffix H Configuration Single die Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC APPLICATIONS Immunization of sensitive devices in automotive, telecommunications, consumer electronics, and industrial equipment from electrostatic discharge (ESD) and transient voltages induced by load switching and lightning. MECHANICAL DATA CaseDO-214AB (SMC) DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating TerminalMatte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test PolarityAs marked Weight 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1) Peak power dissipation at T =25C, tp=1ms P 1500 W A PK Steady state power dissipation at T =25C P 5 W A D Peak forward surge current, 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load (2) Forward Voltage I =100A for Unidirectional only V 3.5 /5.0 V F F Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG Notes: 1. Non-repetitive current pulse per Fig. 3 and derated above T =25C per Fig. 2 A 2. V =3.5V on SMCJ5.0 - SMCJ90 devices and V =5.0V on SMCJ100 - SMCJ170 devices F F Devices for bipolar applications 1. For bidirectional use C or CA suffix for types SMCJ5.0 - types SMCJ170 2. Electrical characteristics apply in both directions 1 Version: Q1812 SMCJ5.0(A) - SMCJ170(A) Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 55 C/W JA Junction-to-case thermal resistance R 10 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Maximum Maximum Working Maximum peak Breakdown Test clamping voltage stand-off Reverse impulse Marking current voltage Part number voltage Leakage current V I BR T code I (Note 2) T (V) V (Note 3) (Note 2) WM (mA) V I C PPM (V) I V (A) I R WM PPM (V) (A) MIN. MAX. SMCJ5.0 GDD 6.4 7.3 10 5 1000 164 9.6 SMCJ5.0A GDE 6.4 7 10 5 1000 171 9.2 SMCJ6.0 GDF 6.67 8.15 10 6 1000 138 11.4 SMCJ6.0A GDG 6.67 7.37 10 6 1000 152 10.3 SMCJ6.5 GDH 7.22 8.82 10 6.5 500 128 12.3 SMCJ6.5A GDK 7.22 7.98 10 6.5 500 140 11.2 SMCJ7.0 GDL 7.78 9.51 10 7 200 118 13.3 SMCJ7.0A GDM 7.78 8.6 10 7 200 131 12.0 SMCJ7.5 GDN 8.33 10.30 1 7.5 100 110 14.3 SMCJ7.5A GDP 8.33 9.21 1 7.5 100 122 12.9 SMCJ8.0 GDQ 8.89 10.9 1 8 50 105 15.0 SMCJ8.0A GDR 8.89 9.83 1 8 50 115 13.6 SMCJ8.5 GDS 9.44 11.5 1 8.5 20 99 15.9 SMCJ8.5A GDT 9.44 10.4 1 8.5 20 109 14.4 SMCJ9.0 GDU 10 12.2 1 9 10 93 16.9 SMCJ9.0A GDV 10 11.1 1 9 10 102 15.4 SMCJ10 GDW 11.1 13.6 1 10 5 83 18.8 SMCJ10A GDX 11.1 12.3 1 10 5 92 17.0 SMCJ11 GDY 12.2 14.9 1 11 1 78 20.1 SMCJ11A GDZ 12.2 13.5 1 11 1 86 18.2 SMCJ12 GED 13.3 16.3 1 12 1 71 22.0 SMCJ12A GEE 13.3 14.7 1 12 1 79 19.9 SMCJ13 GEF 14.4 17.6 1 13 1 66 23.8 SMCJ13A GEG 14.4 15.9 1 13 1 73 21.5 SMCJ14 GEH 15.6 19.1 1 14 1 61 25.8 SMCJ14A GEK 15.6 17.2 1 14 1 67 23.2 SMCJ15 GEL 16.7 20.4 1 15 1 58 26.9 SMCJ15A GEM 16.7 18.5 1 15 1 64 24.4 SMCJ16 GEN 17.8 21.8 1 16 1 54 28.8 SMCJ16A GEP 17.8 19.7 1 16 1 60 26.0 SMCJ17 GEQ 18.9 23.1 1 17 1 51 30.5 SMCJ17A GER 18.9 20.9 1 17 1 57 27.6 SMCJ18 GES 20 24.4 1 18 1 48 32.2 SMCJ18A GET 20 22.1 1 18 1 53 29.2 SMCJ20 GEU 22.2 27.1 1 20 1 43 35.8 SMCJ20A GEV 22.2 24.5 1 20 1 48 32.4 SMCJ22 GEW 24.4 29.8 1 22 1 39 39.4 SMCJ22A GEX 24.4 26.9 1 22 1 44 35.5 SMCJ24 GEY 26.7 32.6 1 24 1 36 43.0 SMCJ24A GEZ 26.7 29.5 1 24 1 40 38.9 SMCJ26 GFD 28.9 35.3 1 26 1 33 46.6 SMCJ26A GFE 28.9 31.9 1 26 1 37 42.1 SMCJ28 GFF 31.1 38 1 28 1 31 50.0 2 Version: Q1812

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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