Product Information

SMBJ48A

SMBJ48A electronic component of Taiwan Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 600W 56.1V 5% Unidir ectional TVS
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4212 ea
Line Total: USD 0.42

4600 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4600 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

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SMBJ48A
Taiwan Semiconductor

1 : USD 0.4212
10 : USD 0.3263
100 : USD 0.1994
500 : USD 0.1839
1000 : USD 0.1317
3000 : USD 0.1115
9000 : USD 0.1115
24000 : USD 0.1115
45000 : USD 0.1068

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Taric
Vf - Forward Voltage
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Additional Infomation About Product

SMBJ5V0(C)A SMBJ170(C)A Taiwan Semiconductor 600W Transient Voltage Suppressor FEATURES Glass passivated junction 600W peak pulse power capability on 10/1000s waveform Excellent clamping capability Low-Incremental surge resistance Fast response time: Typically less than 1.0ps from 0V to BV minimum for unidirectional and 5.0ns for bidirectional Typical I less than 1A above 10V R UL certificate E258596 SMB/DO-214AA Band denotes cathode on unidirectional devices only. No band on bi-directional devices. Bi-directional types have CA suffix where electrical chatacteristics apply in both directions suitable for bi-directional applications. ABSOLUTE MAXIMUM RATINGS Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation t =1ms P 600 W p PPM Peak pulse current on 10/1000s waveform I see table A PPM Non-Repetitive Peak Forward Surge Current (1) I 100 A FSM Superimposed on Rated Load (JEDEC Method) T -55 to +150 C Junction temperature J T -55 to +150 C Storage temperature STG Note: 1. Measured on 8.3ms single half-sine wave duty cycle = 4 pulses per minute maximum. 1 Version: B1910 SMBJ5V0(C)A SMBJ170(C)A Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Breakdown Reverse Reverse Test Clamping Voltage Uni-directional Stand-Off Peak Pulse Leakage Part Current Voltage V Bi-directional (C) (2) Voltage BR Current Current Marking I at I T PPM (V) Device V I (A) at V RWM PPM RWM (mA) V (V) C (3) (V) I (A) R Min. Max. SMBJ5V0(C)A KE 5.0 6.4 7 10 9.2 65.2 800 SMBJ6V0(C)A KG 6.0 6.67 7.37 10 10.3 58.3 800 SMBJ6V5(C)A KK 6.5 7.22 7.98 10 11.2 53.6 500 SMBJ7V0(C)A KM 7.0 7.78 8.6 10 12.0 50 200 SMBJ7V5(C)A KP 7.5 8.33 9.21 1 12.9 46.5 100 SMBJ8V0(C)A KR 8.0 8.89 9.83 1 13.6 44.1 50 SMBJ8V5(C)A KT 8.5 9.44 10.4 1 14.4 41.7 20 SMBJ9V0(C)A KV 9.0 10 11.1 1 15.4 39 10 SMBJ10(C)A KX 10 11.1 12.8 1 17.0 35.3 5 SMBJ11(C)A KZ 11 12.2 13.5 1 18.2 33 5 SMBJ12(C)A LE 12 13.3 14.7 1 19.9 30.2 5 SMBJ13(C)A LG 13 14.4 15.9 1 21.5 27.9 5 SMBJ14(C)A LK 14 15.6 17.2 1 23.2 25.9 5 SMBJ15(C)A LM 15 16.7 18.5 1 24.4 24.6 5 SMBJ16(C)A LP 16 17.8 19.7 1 26.0 23.1 5 SMBJ17(C)A LR 17 18.9 20.9 1 27.6 21.7 5 SMBJ18(C)A LT 18 20 22.1 1 29.2 20.5 5 SMBJ20(C)A LV 20 22.2 24.5 1 32.4 18.5 5 SMBJ22(C)A LX 22 24.4 26.9 1 35.5 16.9 5 SMBJ24(C)A LZ 24 26.7 29.5 1 38.9 15.4 5 SMBJ26(C)A ME 26 28.9 31.9 1 42.1 14.3 5 SMBJ28(C)A MG 28 31.1 34.4 1 45.4 13.2 5 SMBJ30(C)A MK 30 33.3 36.8 1 48.4 12.4 5 SMBJ33(C)A MM 33 36.7 40.6 1 53.3 11.3 5 SMBJ36(C)A MP 36 40 44.2 1 58.1 10.3 5 SMBJ40(C)A MR 40 44.4 49.1 1 64.5 9.3 5 SMBJ43(C)A MT 43 47.8 52.8 1 69.4 8.6 5 SMBJ45(C)A MV 45 50 55.3 1 72.7 8.3 5 SMBJ48(C)A MX 48 53.3 58.9 1 77.4 7.8 5 SMBJ51(C)A MZ 51 56.7 62.7 1 82.4 7.3 5 SMBJ54(C)A NE 54 60 66.3 1 87.1 6.9 5 SMBJ58(C)A NG 58 64.4 71.2 1 93.6 6.4 5 SMBJ60(C)A NK 60 66.7 73.7 1 96.8 6.2 5 SMBJ64(C)A NM 64 71.1 78.6 1 103 5.8 5 SMBJ70(C)A NP 70 77.8 86 1 113 5.3 5 SMBJ75(C)A NR 75 83.3 92.1 1 121 5 5 SMBJ78(C)A NT 78 86.7 95.8 1 126 4.8 5 2 Version: B1910

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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